FDME1023PZT Allicdata Electronics
Allicdata Part #:

FDME1023PZTCT-ND

Manufacturer Part#:

FDME1023PZT

Price: $ 0.56
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2P-CH 20V 2.6A 6-MICROFET
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 2.6A 600mW Sur...
DataSheet: FDME1023PZT datasheetFDME1023PZT Datasheet/PDF
Quantity: 2486
1 +: $ 0.51030
10 +: $ 0.44415
100 +: $ 0.34253
500 +: $ 0.25373
1000 +: $ 0.20297
Stock 2486Can Ship Immediately
$ 0.56
Specifications
Series: PowerTrench®
Packaging: Cut Tape (CT) 
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 142 mOhm @ 2.3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Power - Max: 600mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: 6-MicroFET (1.6x1.6)
Description

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The FDME1023PZT is a surface-mounted, N-channel MOSFET belonging to a series of 60-V logic level MOSFETs provided by Fairchild’s D2Pak family. This device is specifically designed for advanced switching applications.

Application field

The FDME1023PZT is suitable for utilization in power electronic design and power distribution systems, such as powerful switches found in distributed power systems (DPS) and other industrial equipment used for controlling high-current power delivery and load control. Additionally, these devices can also be used in high-temperature environments, since they have a maximum junction temperature of 175°C.

This device is essentially a logic level MOSFET that can be used as an electrically controlled switch to quickly switch between high power levels. As such, switching audio signals, motor controllers and welding machines are some of the various applications that the FDME1023PZT can be utilized in.

Working principle

The FDME1023PZT is fundamentally a solid state device which acts as an on/off switch for high power levels under low voltage control. The device is based on MOSFET technology, which utilizes an insulated gate to control the movement of charge carriers (electrons and holes) between the source and the drain. In operation, the voltage applied to the gate determines whether the MOSFET is “on” or “off”, with the on state being characterized by low-resistance between the source and the drain.

As mentioned above, the FDME1023PZT is a logic level MOSFET and is specifically designed for advanced switching applications due to its ability to quickly switch between high power levels in response to a low voltage control, enabling fast switching of high power levels without excessively heating up. This device also features low on-resistance and low Gate-source capacitance, which further improve the switching capabilities of the FDME1023PZT. Additionally, the FDME1023PZT is designed to accommodate high temperatures and provide long-term reliability.

To sum up, the FDME1023PZT is a surface-mounted N-channel MOSFET capable of quickly switching between high power levels with a low voltage control. Its high on-resistance, low capacitance and ability to handle high temperatures (175°C junction temperature) makes it suitable for use in various applications involving power delivery and control, such as powerful switches and motor controllers.

The specific data is subject to PDF, and the above content is for reference

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