Allicdata Part #: | FDME910PZTTR-ND |
Manufacturer Part#: |
FDME910PZT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P CH 20V 8A MICROFET |
More Detail: | P-Channel 20V 8A (Ta) 2.1W (Ta) Surface Mount Micr... |
DataSheet: | FDME910PZT Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 6-PowerUFDFN |
Supplier Device Package: | MicroFet 1.6x1.6 Thin |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2110pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 8A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDME910PZT is a type of single field-effect transistor manufactured by NXP Semiconductors. This type of transistor is used in a wide range of applications from small electronic devices to industrial robotics. FDME910PZT is a type of metal-oxide semiconductor field-effect transistor (MOSFET). It is a three-terminal device with a source, drain, and gate terminals.
An MOSFET is composed of two types of regions in a semiconductor, drain and source, that are separated by a region called a gate. The transistor operates by having an electric charge applied to the gate. This charge induces an electric field in the source and drain regions that allow current to flow between the two.
The main application of FDME910PZT is digital logic circuits. The transistor is used in inverters, memory circuitry, power management circuits, and switch control. In inverters, the MOSFET can act as a switch to control the state of its output pin. For example, the output pin on a MOSFET inverter will be high for current passing through the device and low when there is no current.
In memory circuitry, FDME910PZT is used to store binary data in its gate. This makes it possible to store analog data in the form of binary numbers. It is also used for power management circuits as it can act as a current switch in order to regulate the voltage within the circuit. FDME910PZT can also be used for switch control as it can be used to drive higher current loads than typical logic circuits.
The FDME910PZT has a variety of features that make it ideal for a wide range of applications. For instance, the electrostatic discharge (ESD) protection limits the amount of electric current that can flow through the gate region. This helps prevents further damage to the device if the device is subject to high ESD levels. In addition, the device also has a lower on-resistance, which allows for larger current to flow through the MOSFET when it is on.
The FDME910PZT also has a wide range of temperature and voltage ratings. The maximum allowable operating temperature range is from -55°C to 125°C and the maximum allowable voltage range is from 2.25V to 40V. These ratings make the device suitable for use in extreme environmental conditions.
In summary, the FDME910PZT is a type of single metal-oxide semiconductor field-effect transistor mainly used for digital logic and memory circuitry. It offers a variety of features such as ESD protection, lower on-resistance, and wide temperature and voltage ratings, which makes it suitable for many different applications.
The specific data is subject to PDF, and the above content is for reference
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