FDME820NZT Discrete Semiconductor Products

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FDME820NZT is a metal-oxide semiconductor field effect transistor (MOSFET). It has a high current carrying capability in its drain-source, which benefits it for high power, high voltage switching devices. It is a discrete component fabricated on integrated circuit, wherein silicon wafers are used to create the source, drain and gate electrodes.

FDME820NZT offers an extended range of applications due to the many characteristics associated with it. Its on-resistance is low, and its gate-to-source leak current is also low. Its increased source-to-source resistance is short, and its drain-to-drain resistance is also short. Its thermal resistance is low, making it ideal for low voltage devices. Its low rate of turn-on and turn-off resistance makes it suitable for applications that require high response times.

The working principle behind FDME820NZT is quite simple. It has a drain, source and gate terminal. The drain and source terminals are connected to a circuit or switch while the gate terminal is connected to the control voltage source. When the voltage between source and gate is negative, an electric current flows from the source to the drain since the transistor is turned off. When the voltage between the source and gate is positive, an electric current flows from the source to the gate since the transistor is now turned on. So the transistor allows electricity to pass through the device, depending on the voltage applied to the gate terminal.

FDME820NZT is primarily used in power switching or power distribution applications, power amplifiers, and analog circuits. It is also used in high-voltage inverters, DC-AC converters and low-frequency oscillators. Its low-threshold voltage and fast switching speeds make it ideal for switching applications that require switching and current carry capability with high speeds and precision. Its low gate capacitance also makes it suitable for applications with high-speed switching speeds. It also has the capability to control low-impedance loads such as solenoids, capacitors, transformers, and magnetrons.

In conclusion, FDME820NZT is suitable for a wide range of applications that require high-speed switching and current carrying capability. Its low on-resistance, low leakage current, and low thermal resistance makes it suitable for high-voltage and low-voltage applications. Its low rate of turn-on and turn-off resistance also makes it ideal for applications that require high response times. The working principle behind this device is based on the controlling of current flow through the use of voltage applied on the gate terminal. It is ideal for power distribution and switching, amplifiers and analog circuits, inverters, DC-AC converters, and low-frequency oscillators.

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