FDME430NT Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1.5V @ 250µA
Package / Case:	6-PowerUFDFN
Supplier Device Package:	MicroFet 1.6x1.6 Thin
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	760pF @ 15V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	9nC @ 4.5V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	40 mOhm @ 6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	6A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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FDME430NT, a N channel enhancement mode field effect transistor (FET), is primarily designed for low voltage, low current, and low power, applications which require enhanced switching performance. The FDME430NT offers improved RDS (on) value and a higher drain to source breakdown voltage when compared to the other devices available in the same package. Given its low on-state resistance, FDME430NT is suitable for various low voltage and low current applications including power management, load switching and other battery-powered applications.

Features

• RDS (on) max is 132mΩ (at VGS=4.5V, ID=3.5A)
• Integrated level-shift circuitry
• 80nC input capacitance
• Drain-source breakdown voltage (BVDSS) is 25V min
• Operating temperature range from -40°C to +150°C
• Available in both SOT-23-3 and D-PAK through-hole packages

Applications

• Portable and desktop computers
• Mobile phones and automotive control systems
• Battery powered applications
• Power management, load switching

Working Principle

The FDME430NT is an N Channel Enhancement Mode Field Effect Transistor (FET). It consists of a N-type silicon channel operating between the source and the drain, where the current flow is controlled by applying a voltage to the gate. The gate voltage can be used to switch the FET between the “on” state and the “off” state. When the voltage applied to the gate is positive, the N-type material is “enhanced” which means it has a greater number of majority carriers, leading to an increased current flow between the source and the drain. On the other hand, when the gate voltage is zero or negative, the N-type material is “depleted”, meaning that the number of majority carriers is depleted leading to a decrease in current flow between the source and the drain. As such, the FET can be used as an electronic switch to control the flow of current.

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