| Allicdata Part #: | FDP4D5N10C-ND |
| Manufacturer Part#: |
FDP4D5N10C |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | FET ENGR DEV-NOT REL |
| More Detail: | N-Channel 100V 128A (Tc) 2.4W (Ta), 150W (Tc) Thro... |
| DataSheet: |  FDP4D5N10C Datasheet/PDF |
| Quantity: | 1000 |
| Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 2.4W (Ta), 150W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5065pF @ 50V |
| Vgs (Max): | ±20V |
| Series: | PowerTrench® |
| Vgs(th) (Max) @ Id: | 4V @ 310µA |
| Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 100A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 128A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
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FDP4D5N10C is a discrete device specifically designed as an N-Channel MOSFET. MOSFET stands for Metal-Oxide-Semiconductor Field-Effect Transistor, and it is one of the most versatile types of active components available. The FDP4D5N10C possesses a low on-resistance of 4.5 Ohm, which is a function of its dimensions (4mm W x 5mm L x 10.2mm H).
N-Channel MOSFETs are commonly used in various applications as amplifiers, voltage sources, voltage regulators, switches, and signal conditioning functions. As a switch, the transistor can be used to control the ON/OFF state of an electrical circuit, or activate a relay. It can also be used in signal conditioning circuits--such as a power amplifier or signal processor--that process signal guides or functions.
The FDP4D5N10C’s power dissipation capability of up to 650 mW also makes it highly suitable for applications such as LED lighting, high-power switching circuits, and wireless power delivery, among others. Its small size allows it to be used in compact designs, and its low-resistance characteristics and wide operation voltage range make it suitable for voltage-sensitive and low-power applications.
The function of an N-Channel MOSFET can be explained using the working principle of a capacitor. The gate terminal of the MOSFET is analogous to the positive plate of a capacitor, and the source is analogous to the negative plate. When an input signal is applied to the gate terminal, it charges the capacitor, creating an electric field that attracts electrons from the source and creates a conductive channel between the source and the drain. This channel acts as a switch, allowing current to flow from the source to the drain.
The FDP4D5N10C also features on-state and reverse-body-diode voltage ratings of 10V and 5V respectively, which allows it to operate in high voltage or reverse polarity applications. In terms of switching speeds, the FDP4D5N10C is a relatively slow device, possessing an on-state switching time of 200ns.
In summary, the FDP4D5N10C is an ideal choice for a range of applications that require a MOSFET with high power rating and low on-resistance. Its features, such as its low switching time and voltage rating, make it a suitable choice for applications with both high and low-voltage requirements.
The specific data is subject to PDF, and the above content is for reference
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