FDP6030BL Allicdata Electronics
Allicdata Part #:

FDP6030BL-ND

Manufacturer Part#:

FDP6030BL

Price: $ 1.13
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 40A TO-220
More Detail: N-Channel 30V 40A (Tc) 60W (Tc) Through Hole TO-22...
DataSheet: FDP6030BL datasheetFDP6030BL Datasheet/PDF
Quantity: 701
1 +: $ 1.13000
10 +: $ 1.09610
100 +: $ 1.07350
1000 +: $ 1.05090
10000 +: $ 1.01700
Stock 701Can Ship Immediately
$ 1.13
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Power Dissipation (Max): 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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FDP6030BL Application Field and Working Principle

FDP6030BL is a type of active semiconductor device, which belongs to the P-Channel Expansion Element category. It is also known as a field-effect transistor, or FET. This specific type of FET is an N-channel Enhancement-type Field Effect Transistor, or MOSFET. It is a single, unipolar device and can be used as an amplifier or signal switching system.

FDP6030BL is typically employed in applications where high levels of switching power and speed are necessary. It is also used in inverters, amplifiers, logic control, and other digital signal applications. This MOSFET has particularly high switching performance, making it perfect for power switching applications.

Working principle of FDP6030BL is based on the usage of the electron flow in the channel. When a drift region is provided between the source and the drain, the electrons in the channel can be driven by the electric field formed between the source and the drain. The drain is usually connected to the substrate, helping to create an higher level of resistance. Through the applied gradient field, the electrons can flow in the channel and be pushed towards the drain. That is why FDP6030BL is largely used in power switching applications.

The potential gradient between the gates, sources, and drains of an FDP6030BL is such that the electrons are pulled in the channel, resulting in current flow through the device. This phenomenon is known as the drain-source voltage in transistors. In an FDP6030BL, this voltage is further decreased, allowing for higher switching speed and power.

The maximum drain-source voltage of an FDP6030BL is limited to 20 volts, while the drain-gate voltage is limited to 5 volts. The gate-to-source voltage is limited to 7 volts. This ensures that the device remains safe in operation and has a wide range of applications.

FDP6030BL is also very reliable in operation as it features a high power dissipation of 2000Watts, and a maximum operating temperature of 125℃. Another great feature of this device is its low gate charge, making it ideal for use in high-frequency switching applications. This MOSFET is widely used in various commercial products, such as telephone systems, remote power amplifiers, power switching circuits, and more. Its versatility and reliability make it highly popular in the market.

In conclusion, FDP6030BL is a reliable and versatile active semiconductor, which is widely used in various commercial products. It is a single, unipolar, P-channel Enhancement-type Field Effect Transistor, and is particularly suited for applications where high switching power and speed are essential. Its versatility, reliability, and low power dissipation make it a popular choice in the market.

The specific data is subject to PDF, and the above content is for reference

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