FDP7030L Allicdata Electronics
Allicdata Part #:

FDP7030L-ND

Manufacturer Part#:

FDP7030L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 80A TO-220
More Detail: N-Channel 30V 80A (Ta) 68W (Tc) Through Hole TO-22...
DataSheet: FDP7030L datasheetFDP7030L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 7 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The FDP7030L is a high-speed power MOSFET product by Fairchild Semiconductor. It is a voltage-controlled, single N-Channel MOSFET of new generation which offers high speed performance and low gate charge. The FDP7030L has various applications in fast switching and power management operations because of its excellent switching characteristics, yet maintains low power losses despite its high current ratings.

The typical application for the FDP7030L is in broadband amplifiers, IC power switches, DCDC converters, power distribution, and high frequency switching. It is suitable for high-frequency DC and AC applications, including power management on portable, telecommunication, and automotive devices. FDP7030L, in combination with other components, can be utilized in very high-frequency switchers, DC-DC converters and many other switching applications.

The drain-source breakdown voltage of the FDP7030L is also very low, reducing the power loss through capacitive turn-on characteristics. This makes it very suitable in PWM (pulse-width modulation) switch mode power supplies, such as in H-bridge, class-D and class-G switching applications. Furthermore, the FDP7030L can handle 10A at 100V and its on-resistance is only 140 mΩ. The FDP7030L is a highly efficient, cost effective, and easily usable product.

The operating principle of the FDP7030L is same as that of other MOSFETs. It utilizes the Metal Oxide Semiconductor (MOS) Structure, wherein a highly conductive depression, known as the ‘channel’, is created in the Gate-Drain-Source area of the semiconductor. A positive Voltage is applied to the Gate in order to create a conductive channel between the Drain and Source, allowing current to pass through. The strength of the voltage applied determines the ‘strength’ of the channel, affecting the current flow. Upon the removal of the voltage on the Gate, the channel is closed and the current flow is stopped. Hence, the FDP7030L is a great power switching tool.

The FDP7030L has low gate charge and maintains low conduction loss while handling high amounts of current. It is comparable to many of the higher rated MOSFETs, such as the IRF640 and the FDJ111, but it offers better switching speed and gate charge. Its operating temperature range is also much wider than most, up to 175°C. This makes it great for many applications, especially as a voltage regulator.

The FDP7030L is a unique and highly efficient MOSFET which offers excellent power management compared to its counterparts. It is suitable for high frequency DC and AC operations and its low gate charge makes it an excellent tool in switching applications. It is an ideal choice in power management situations, as its operating temperature range is wide and its losses are low.

The specific data is subject to PDF, and the above content is for reference

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