FDPC5018SG Discrete Semiconductor Products

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It is often assumed that the FDPC5018SG is relatively new in the technology world. Nonetheless, this high-power, high-speed silicon field effect transistor has been around since 1993 and is still commonly used today. Originally designed by Toshiba, the FDPC5018SG is a power MOSFET array comprised of 8 N-channel enhancement mode transistors in a single package. The device is able to operate as either a high-side switch or as low-side switch, making it a very useful component in many applications. This article will discuss the application fields and working principles of the FDPC5018SG.

General Specifications

The FDCP5018SG is a dense International Rectifier (IR) power MOSFET array with 8 power transistors in a single package. It has an operating temperature range of -55°C to 150°C and a Drain-Source voltage rating of 500V. It is also capable of delivering a maximum Drain continuous current of 30A and a maximum peak current of 71A.

Application Fields

The FDPC5018SG is highly versatile, and can be used in a wide variety of applications. It is often used in automotive applications, particularly in the power train, for switching and for load regulation. It can also be used in power supplies and engine management systems, as well as in motor control circuits such as brushless DC motor drives. In addition, it can be used in audio amplifiers and other industrial and commercial equipment.

Working Principle

The FDPC5018SG works by using a "floating" gate and an insulated gate structure. When a positive voltage is applied to the gate, a type of channel is formed and electrons are allowed to flow from the source to the drain, resulting in a current flow. When a negative voltage is applied to the gate, the channel is stopped, and the current flow is stopped as well. This principle allows for the device to act as either a high-side switch or a low-side switch.

Design Considerations

When using the FDPC5018SG, a few design considerations must be taken into account. It is important to ensure that the gate-source voltage (VGS) is kept within the specified range in order to prevent the possibility of permanent damage to the transistor. It is also important to ensure that the drain-to-source current (ID) does not exceed the maximum allowed current ratings of the device in order to avoid damage. Additionally, the die temperature should be monitored in order to ensure that the device remains within its temperature rating.

Conclusion

The FDPC5018SG is a highly versatile power MOSFET array that is commonly used in a variety of applications. It has an operating temperature range of -55°C to 150°C, a drain-source voltage rating of 500V, and a maximum drain continuous current of 30A. It works by using a floating gate and an insulated gate structure and can be used as either a high-side switch or a low-side switch. When designing a circuit with the FDPC5018SG, a few design considerations must be taken into account in order to ensure that the device is not damaged or overheated.

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