FDPC8011S Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.2V @ 250µA
Base Part Number:	FDPC8011S
Supplier Device Package:	Powerclip-33
Package / Case:	8-PowerWDFN
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	800mW, 900mW
Input Capacitance (Ciss) (Max) @ Vds:	1240pF @ 13V
Gate Charge (Qg) (Max) @ Vgs:	19nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	6 mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C:	13A, 27A
Drain to Source Voltage (Vdss):	25V
FET Feature:	Logic Level Gate
FET Type:	2 N-Channel (Dual) Asymmetrical
Part Status:	Active
Packaging:	Tape & Reel (TR)

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FDPC8011S application field and working principle

FDPC8011S is a Field-Effect Transistor (FET) array manufactured by Fairchild Semiconductors. It is typically used as a single component in power supply systems for radio-frequency (RF) amplifiers, voltage regulators, and digital logic stages due to its low cost, small size, and high efficiency. The FDPC8011S is an eight-pin package that contains two N-channel enhancement mode MOSFETs (metal–oxide–semiconductor field-effect transistors). It is designed specifically for use in low-power applications and can provide up to 500 mA of current.A MOSFET is an electronic component that functions as an amplifier, enabling the control of high current and/or high voltage with small amounts of voltage control. The FDPC8011S is a "dual MOSFET" array, meaning it contains two identical MOSFETs in one package that can be controlled independently.The FDPC8011S requires a single power supply to drive both MOSFETs, which is typically the default state in most applications. However, each of the two MOSFETs can be driven independently if desired by providing separate power to each MOSFET using an additional supply pin and the isolated ground pins (G2 and G3). This allows the FDPC8011S to function as two separate MOSFETs, enabling different circuits to be driven from the same package.MOSFETs contain a source, a drain, and a gate, which are all connected together via the silicon substrate. The source and the drain pins of the FDPC8011S are connected to the power supply (V+ and Ground). The gate pin is connected to a control voltage, typically provided by a CMOS digital logic circuit. By applying voltage to the gate pin, the FDPC8011S is able to control the amount of current that flows from the source to the drain.The FDPC8011S is one of the few FET arrays on the market, providing a low-cost, small size and high efficiency solution, while also offering an independent gate drive to each of the two MOSFETs, allowing each to be driven separately when required. This makes the FDPC8011S an ideal choice for RF amplifiers, voltage regulators, and digital logic stages. It is also a great choice for interfacing with a variety of circuits, including logic circuits and power supplies.

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