FDPC8014AS Discrete Semiconductor Products |
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Allicdata Part #: | FDPC8014ASTR-ND |
Manufacturer Part#: |
FDPC8014AS |
Price: | $ 0.94 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 25V 20A/40A |
More Detail: | Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 2... |
DataSheet: | FDPC8014AS Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.85239 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Asymmetrical |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 20A, 40A |
Rds On (Max) @ Id, Vgs: | 3.8 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2375pF @ 13V |
Power - Max: | 2.1W, 2.3W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | Power Clip 56 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FDPC8014AS is a special field effect transistor (FET) array. The FET array is composed of two FETs with complementary outputs, designed for low noise, low voltage and extremely low input bias current operation. It is one of the latest products in the industry for audio and data acquisition applications.
FDPC8014AS FET array has many features and advantages. The most prominent features include superior gain bandwidth product, extremely low bias current, low voltage operation, low thermal noise and high CMRR. It is also designed for low power consumption and excellent power supply rejection. In addition, the FETs in the array are also designed for very low leakage current, allowing superior performance in audio and data acquisition applications.
The FDPC8014AS FET array contains two FETs with complementary outputs and operates with high gain. The design of this FET array and the quality of components used make it suitable for both audio and data acquisition applications. This FET is characterized by an extremely low input voltage of 0.4V and a maximum output current of 4 amps. The high CMRR of this device is also notable, making it an ideal choice for high performance applications.
The working principle of FDPC8014AS FET array is based on the same mechanism as a MOSFET (metal–oxide–semiconductor field effect transistor). MOSFETs are semiconductor devices that are used in power electronics as voltage controlled switches which are used to control and regulate electrical currents. In the case of FDPC8014AS FET array, the input signal is first passed through the MOSFETs and is then converted into the output voltage or current. This output voltage or current controls the operation of the device.
The FDPC8014AS FET array is suitable for use in data acquisition applications, audio and low power applications. It is designed to operate from a wide range of supply voltages, from 2V to 28V, making it ideal for portable applications. It can also operate at temperatures up to 85 °C. The extremely low input voltage and bias current of 0.4V and 4 amps make this device suitable for very low power applications.
In summary, FDPC8014AS FET array is a field effect transistor with two complementary outputs, designed for low noise, low voltage and extremely low input bias current operation. It is designed for audio and data acquisition applications, as well as low power applications. The extremely low input voltage and bias current, as well as the high CMRR make it an ideal choice for applications which require high performance and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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