FDPC8014S Discrete Semiconductor Products |
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Allicdata Part #: | FDPC8014STR-ND |
Manufacturer Part#: |
FDPC8014S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 25V 8PWRCLIP |
More Detail: | Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 2... |
DataSheet: | FDPC8014S Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Asymmetrical |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 20A, 41A |
Rds On (Max) @ Id, Vgs: | 3.8 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2375pF @ 13V |
Power - Max: | 2.1W, 2.3W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | Power Clip 56 |
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FDPC8014S is a Field Effect Transistor (FET) array that consists of eight N-Channel MOSFETs. Each of the FETs has a separate gate and drain connection that allows for control of individual elements in the array. The FDPC8014S is suitable for use in applications that require multiple, isolated transistors such as data switching and power conversion circuits.
The FDPC8014S is available in either a through-hole, solderable version (FDPC8014S-T) or a surface mount version (FDPC8014S-S) that is RoHS compliant. Both versions offer a low on-resistance (Ron) of 5 to 6 ohms, a low gate-source threshold voltage of -4 to -5 volts and a conduction bandwidth of 50 MHz. The maximum output current is 30 amperes, with a maximum voltage rating of 30 volts.
The FDPC8014S utilizes N-channel MOSFETs with a source-gate configuration. This device normally operates in the depletion mode, meaning that it will draw a small current when applied a voltage and no voltage is applied at the gate. The current can be increased by applying a gate voltage greater than the threshold voltage, resulting in an increase in the drain current. The amount of current can also be controlled by adjusting the gate voltage. This type of operation is called "VGS threshold modulation" and allows for precise control of the current flowing through the device.
The FDPC8014S offers multiple advantages over other types of FETs. One major advantage is its low on-resistance, which makes it ideal for power-saving applications. Additionally, the FDPC8014S provides a high input impedance, which ensures that the FETs can withstand transient voltages without damage to the circuit components. The device also has a wide common-mode range, which allows it to operate properly in applications with a wide range of input voltages.
The FDPC8014S is most commonly used in power switching, level shifting and motor control applications. It is often used to provide precise control of the power delivered to a motor, as the gate voltage can be adjusted to control the current flowing through the motor. It can also be used in switching circuits where power control needs to be precise and fast. The FET array can also be used as level shifting circuits, as the voltage applied to the gate can be adjusted to control the voltage applied to the drains. This can be used to create a voltage level shifter, which can be used in data conversion circuits.
The FDPC8014S is a powerful FET array that provides multiple advantages over other types of FETs. It offers a low on-resistance and a wide common-mode range, which makes it suitable for applications requiring precise power control. Additionally, it offers a high input impedance which makes it suitable for applications subject to transient voltage swings. The FDPC8014S is an ideal choice for power switching, level shifting and motor control.
The specific data is subject to PDF, and the above content is for reference
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