FDR4420A Discrete Semiconductor Products |
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| Allicdata Part #: | FDR4420ATR-ND |
| Manufacturer Part#: |
FDR4420A |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 11A SSOT-8 |
| More Detail: | N-Channel 30V 11A (Ta) 1.8W (Ta) Surface Mount Sup... |
| DataSheet: |  FDR4420A Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | 8-SMD, Gull Wing |
| Supplier Device Package: | SuperSOT™-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.8W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2560pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 9 mOhm @ 11A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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FDR4420A is a power Metal Oxide Semiconductor Field Effect Transistor (MOSFET), a type of transistor implementing the field-effect transistor (FET) principle. This MOSFET is commonly used in model rocketry, as it provides relatively low on-resistance with low gate charge and moderate-high switching frequency characteristics.
The FDR4420A MOSFET features a channel size of 45-mm2 and an on-resistance of 0.47 Ω. This MOSFET can provide high efficiency performance in various applications, and its switching frequency can exceed 2 MHz with proper gate drive and low gate-source capacitance. It is also ideal for use in motor control, high frequency power converters, home appliances, and LED or other light sources.
The working principle of the FDR4420A MOSFET is based on the same principle as any other type of transistor, with current flowing through the source to the drain when the gate voltage is applied. The gate voltage is used to turn “on” and “off” the flow of electrons or current, as well as determine its value. Also, the level of gate voltage determines how “strong” or “weak” the current will be.
Furthermore, MOSFETs are electro-magnetic control devices, which means that the gate voltage change can affect the current and voltage simultaneously. This feature makes them attractive for applications requiring sophisticated control.
In the application field of model rocketry, the FDR4420A MOSFET is suitable as it has low on-resistance, low gate charge, and moderate-high switching frequency characteristics. It is ideal for controlling the motor of a model rocket and providing efficiency performance in various applications.
One of the primary advantages of using this transistor in model rocketry is that it is low on-power, with low gate charge and moderate-high switching frequency characteristics. Thus, the need for high current source components is greatly reduced.
In addition, the reduced current in the contact lines decreases voltage drops, allowing the motor to be powered more effectively and increase motor performance. The low gate charge also allows the motor to accelerate quicker, bringing more power with less energy input and increasing efficiency.
The high switching frequency characteristics of the FDR4420A also helps to reduce power and provide faster response times by using fewer current sources, enabling greater efficiency in the application. The high frequency response times also allows the rocket motor to respond quickly to the back EMF generated by the rocket’s motor.
The FDR4420A is a power MOSFET transistor which features a channel size of 45-mm2 and an on-resistance of 0.47 Ω. This MOSFET can provide high efficiency performance in various applications, and its switching frequency can exceed 2 MHz with proper gate drive and low gate-source capacitance.
The working principle of the FDR4420A is based on the same principle as any other type of transistor, with current flowing through the source to the drain when the gate voltage is applied. The gate voltage is used to turn “on” and “off” the flow of electrons or current, as well as determine its value.
In the application field of model rocketry, the FDR4420A is suitable as it has low on-resistance, low gate charge, and moderate-high switching frequency characteristics. It is ideal for controlling the motor of a model rocket and providing efficiency performance in various applications. The reduced current in the contact lines decreases voltage drops, allowing the motor to be powered more effectively and increase motor performance. The high switching frequency characteristics of the FDR4420A also helps to reduce power and provide faster response times by using fewer current sources, enabling greater efficiency in the application.
Overall, the FDR4420A power MOSFET is a great choice for applications in model rocketry, as it has a channel size of 45-mm2, low on-resistance, low gate charge, and moderate-high switching frequency characteristics. Its ability to control the current and voltage simultaneously with its gate voltage change make it an attractive choice for those seeking sophisticated control, while its low gate-source capacitance and reduced current in the contact lines allows improved motor performance and faster response times.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
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| FDR4420A | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 11A SSOT-... |
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