| Allicdata Part #: | FDR6674A-ND |
| Manufacturer Part#: |
FDR6674A |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 11.5A SSOT-8 |
| More Detail: | N-Channel 30V 11.5A (Ta) 1.8W (Ta) Surface Mount S... |
| DataSheet: |  FDR6674A Datasheet/PDF |
| Quantity: | 1000 |
| Series: | PowerTrench® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 11.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 10.5A, 4.5V |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 4.5V |
| Vgs (Max): | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds: | 5070pF @ 15V |
| FET Feature: | -- |
| Power Dissipation (Max): | 1.8W (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SuperSOT™-8 |
| Package / Case: | 8-SMD, Gull Wing |
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The FDR6674A is part of a series of enhancement-mode fieldeffect transistors (FETs) designed specifically to improve the audio performance in mobile phones, tablets, and other mobile audio applications. The device is a Dual P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET), operated in enhancement mode, which exhibits very low RDS(ON) and a low on-resistance in a small footprint area. It also demonstrates superior on-state characteristics, with an extremely low input capacitance and gate tunneling protection to minimize switching noise in high current switching applications.
The FDR6674A has low turn-on and turn-off voltage thresholds with ultra-low static and dynamic resistances, making it ideal for power supply applications. Its adjustable gate threshold allows dynamic control of the on-resistance and current limit. Additionally, due to its low turn-on and off times, the FET can be used as a strong Load switch or used as a low-cost alternative to linear regulation (such as dc-dc converters), providing higher efficiency and flexibility.
The following sections describe the key features of the FDR6674A and its working principle in more detail.
Features
The FDR6674A offers several benefits for mobile audio devices, such as tablets, phones, and other portable devices. These features include:
- A dual N-channel MOSFET with an adjustable threshold voltage and low on-resistance
- Very low switch-off time, providing improved performance in high-speed switching applications
- Low input capacitance, reducing gate tunneling and resulting in less switching noise
- Ultra-low static and dynamic resistances, which helps to reduce power consumption
- Allows dynamic control of on-resistance and current limit
- Uses a small footprint area, making it ideal for portability/mobility
Working Principle
The FEDR6674A is a Single P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET), operated in enhancement mode, which exhibits very low RDS(ON) and a low on-resistance in a small footprint area. This MOSFET is a voltage-controlled device, meaning that it is switched on when the gate voltage is sufficient to create an inversion layer in the channel of the MOSFET. This inversion layer is responsible for the additional current conduction between the source and the drain, which is known as the on-state current. The gate voltage to create this inversion layer is called the threshold voltage. By adjusting this threshold voltage, the MOSFET can be turned on and off at different voltages and the corresponding current limit can be set.
Once the FET is turned on, the current flow between source and drain is determined by the RDS(ON), which is the resistance between the source and the drain when the MOSFET is turned on. The FDR6674A\'s low RDS(ON) ensures very low power dissipation and low on-resistance, allowing the FET to handle higher currents with minimal heat generation. The device also has an adjustable gate threshold that allows for dynamic control of the on-resistance and current limit.
When the FET is switched off, the gate voltage is set to a value lower than the threshold voltage and will not be able to create an inversion layer. This prevents current from flowing between the source and the drain and the FET is said to be in the off-state. The FEDR6674A has a very low turn-off time, allowing it to switch off quickly, making it ideal for high-speed switching applications.
The FEDR6674A is designed to improve the audio performance in mobile audio devices such as tablets, phones, and other portable devices. Its low input capacitance helps to reduce gate tunneling and switching noise, while its low RDS(ON) and adjustable gate threshold allows dynamic control of the on-resistance and current limit. Additionally, its ultra-low static and dynamic resistances helps to reduce power consumption and its small footprint area makes it ideal for portability/mobility.
The specific data is subject to PDF, and the above content is for reference
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