Allicdata Part #: | FDR8305N-ND |
Manufacturer Part#: |
FDR8305N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 20V 4.5A SSOT-8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 4.5A 800mW Sur... |
DataSheet: | FDR8305N Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 4.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 10V |
Power - Max: | 800mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Gull Wing |
Supplier Device Package: | SuperSOT™-8 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDR8305N is an array device, with N-channel MOSFET transistors built into the package for use in electronic switching, amplifying, and other control applications. It is used in a wide range of applications, from automotive to industrial electronics, from consumer electronics to medical electronics, and from general purpose applications to highly specific, custom-engineered applications. The operation of the device is based on the principle of the Metal-Oxide-Silicon Field-Effect Transistor (MOSFET).
The MOSFET is a kind of transistor that is made up of two terminals, the source and the drain. The source supplies the voltage necessary to initiate the proper operation of the device, while the drain receives the output current. In between the source and the drain is a channel, through which the electric current flows. When a voltage is applied to the gate of the MOSFET, it attracts an electric field which essentially "opens" the channel, allowing current to flow from the source to the drain. When the voltage is removed from the gate, the electric field is eliminated, and the channel is "closed" again, stopping the current flow.
The FDR8305N is designed to provide high-efficiency switching and control in applications requiring low switching losses. The device can be configured in various ways, allowing a wide array of configurations to be built. For example, the device can be used to switch up to 8 loads using the source and drain pins, or in an 8-channel configuration to switch up to 128 loads. In addition, an enable pin can be used to enable or disable entire arrays, as well as individual channels. The device also features an active-low logical output that can be used for fault detection.
The FDR8305N also features integrated gate level protection, which prevents damage to the MOSFET due to overvoltage. It also features feed-forward slew rate limiting for increased efficiency and less total harmonic distortion. The device also features anti-dribble protection, which helps to reduce the amount of current surge when the device is switched from one state to another. Finally, the device employs a direct logic interface, which simplifies the connection of multiple devices and simplifies operation.
Overall, the FDR8305N is well-suited for a variety of applications where low switching losses and high levels of performance are required. It is a reliable, cost-effective and flexible device, allowing it to be used in a variety of different applications, from general-purpose switching and control to highly specific, custom-engineered applications. The simplified operation, integrated gate level protection, and slew rate limiting give the device the performance necessary to achieve the desired application goals.
The specific data is subject to PDF, and the above content is for reference
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