FDR842P Discrete Semiconductor Products

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The FDR842P is a type of Field Effect Transistor (FET) used in many industrial and consumer applications. It belongs to the family of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and it is a single-gate device. Field Effect Transistors (FETs) can be thought of as regulators for current and voltage, providing a wide range of device characteristics that can be tailored for use in specific circuitry and conditions. FETs are commonly used to increase or decrease the amount of current passing through a circuit. The permanent current flow allows for a more streamlined and efficient circuit design compared to the other types of transistors.

The FDR842P is designed to operate from low voltage gate signals between 4.5V and 12V. The maximum drain current through the transistor is 4.2A and it can switch a circuit between ON and OFF states quickly. The ON resistance of the device is 2.6 ohms and its maximum supply voltage is 200V. The drain-source breakdown voltage (BVDSS) is 125V, yielding an on-state resistance of only 2.6 ohms. When used as a switch, this device can handle up to a 4.2A current, with an on-state resistance of 2.6 ohms.

The FDR842P metal oxide semiconductor can be used for a flexible, efficient and reliable switching mechanism. Its gate voltage determines the resistance of the transistor and whether current passes through the device. When the gate voltage (Vgs) is applied in excess of the threshold voltage (Vth) of the device, the electric field induces a channel between the source and drain, allowing current to flow through. The on-state resistance of the device is determined by the number of active electrons in the induced channel. As the gate voltage rises, the electric field strengthens, more electrons are induced into the channel, and the on-state resistance of the device decreases.

When the gate voltage is decreased, the electric field weakens and electrons are withdrawn from the channel, increasing the on-state resistance of the device. This enables the semiconductor to switch between on and off states instantaneously and provides excellent noise immunity. The stability of this transistor also allows it to be used in applications that require frequent and repetitive operation without significantly altering the state of the device or destabilizing the circuit.

The FDR842P metal oxide semiconductor is a versatile device, suited for a wide range of applications including power switching, level shifting, and signal conditioning. The device is popular in audio and video electronics, especially for volume and tone control circuits. It is also used for switching and regulating power in low voltage circuits and for buffering RF signals in radio frequency circuits.

The combination of low voltage operation, low on-state resistance, high power handling, and fast switching make the FDR842P metal oxide semiconductor an ideal choice for many power, audio, and RF applications. Whether used as a power switch, level shifter, or audio amplifier, this device provides flexible, efficient, and reliable performance for a variety of applications.

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