FDR8308P

Introduction

The FDS8308P is a Power FET (field effect transistor) array designed for switching applications. It consists of two buses with each bus having two N-Channel power metal-oxide-semiconductor field-effect transistors (MOSFETs) connected in parallel. This configuration offers a high current rating, low RDS(ON) (on-state resistance) for switching, and improved thermal performance.

Application Fields

The FDS8308P is ideally suited for both AC/DC and DC/DC power conversion applications, where high current and fast switching are needed. It can be used in a variety of applications such as switch mode power supplies, industrial motor drives, automotive applications, IGBT-based converters and motor speed controllers.

In addition to the power FET array, the FDS8308P includes a low RDS(ON) MOSFET driver. This driver is optimized for providing high-performance gate drive for the power FETs. The FDS8308P can be used with a wide range of gate drive power supplies, including both DC and AC types.

The FDS8308P is also well suited for high-efficiency power conversion applications. Its low RDS(ON) reduces overall power loss and allows designers to create more efficient systems. Additionally, the FDS8308P’s improved thermal performance enhances system reliability and longevity.

Working Principle

The FDS8308P consists of two gate drivers and two power FETs connected in parallel. The power FETs are used for switching power in the application and are operated by the two gate drivers. The drivers control the gate voltage of the respective FETs and thereby control the current flow through the FETs.

In the FDS8308P, the FETs are connected in parallel to effectively increase current handling and reduce the overall on-resistance. This reduces the power loss and increases the efficiency of the power conversion system. The FDS8308P also has built-in protection features to protect the FETs and the system from damage due to overvoltage, overtemperature, and overcurrent conditions.

Conclusion

The FDS8308P is a high-performance array of power FETs, ideal for switching and DC/DC conversion applications. Its low RDS(ON) reduces power loss, while its high current rating and improved thermal performance enhance reliability and efficiency. It includes a low RDS(ON) MOSFET driver to provide optimized gate drive for the power FETs, and also includes built-in protection features for added system safety.