FDT1600N10ALZ

Vgs(th) (Max) @ Id:	2.8V @ 250µA
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223-4
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	10.42W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	225pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	3.77nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	160 mOhm @ 2.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	5.6A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The FDT1600N10ALZ is a single Power MOSFET from the popular FDP Series manufactured by Fairchild Semiconductor. This high performance and reliable MOSFET provides enhanced power management capabilities for circuits that operate with a wide range of voltages and temperatures. The unique structure of the FDT1600N10ALZ MOSFET enables it to provide maximum power with minimum power loss.

Application Fields

The FDT1600N10ALZ is a high voltage MOSFET designed for use in a variety of applications. Most commonly, they are used in switch mode power supplies, motor control, and servo control. Other application areas include Class-D amplifiers, air conditioning systems, and uninterruptible power supplies. It is also suitable for use in switched mode power supplies and brushless DC motor control circuits.

Features & Benefits

The FDT1600N10ALZ is a highly efficient and reliable MOSFET. It is capable of delivering up to 1600 volts, and has a maximum drain source voltage of 500V. It also has a maximum peak current rating of 1A and a maximum average current rating of 600mA. The FDT1600N10ALZ is also thermally protected, meaning it will switch off the output circuit at predefined temperatures, protecting it from damage.

Working Principle

The FDT1600N10ALZ MOSFET uses a unique structure known as a Vertical DMOS (VDMOS) structure. This structure provides an increased area for the conduction of electricity, which results in a higher conduction current and higher power ratings. The VDMOS structure also reduces the resistance between the drain-source terminals, decreasing power losses and improving power efficiency. The FDT1600N10ALZ is a field-effect transistor (FET). This means that it uses an electric field to control the flow of current between its source and drain. The FET consists of four terminals; the drain, the gate, the source, and the substrate. The voltage applied to the gate controls the current flow between the source and drain. When the gate voltage is zero volts, the MOSFET is off. When the voltage is applied, the MOSFET is on. The FDT1600N10ALZ MOSFETs can operate in either enhancement or depletion modes, depending on the gate voltage.

Conclusion

The FDT1600N10ALZ MOSFET is an efficient, reliable, and powerful device. It is suitable for use in a variety of applications, from switch mode power supplies to brushless DC motor control. The unique Vertical DMOS structure of the FDT1600N10ALZ ensures maximum power with minimum power loss, making it an ideal choice for efficient power management.

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