FDU068AN03L

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	IPAK (TO-251)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	80W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2525pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	60nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	5.7 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	17A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction
FDU068AN03L is a field effect transistor (FET) product from Infineon Technologies. It belongs to the family of single metal oxide semiconductor field effect transistors (MOSFETs) and is suitable for a variety of applications. This document will discuss the application field and working principle of FDU068AN03L in detail.
Application Field
FDU068AN03L is a n-channel enhancement mode FET product, suitable for applications that require low on-state resistance, high breakdown voltage and low gate threshold voltage. These features make FDU068AN03L especially suitable for peak current limiting in AC/DC and DC/DC converters, power management, as well as audio and motor controllers. Its excellent frequency performance ensures that it can be used as a switching device in high-speed applications.
Working Principle
The operation of the FDU068AN03L is based on the principle of field effect transistors. It contains a source, a drain, a gate and a channel. The channel is composed of an oxide layer and is connected to the semiconductor substrate. When an electric field is applied to the gate terminal, the electrons in the channel are induced, forming a conductive bridge between the source and the drain, allowing current to flow. When the gate voltage is switched off, the electrons in the channel are depleted and current is no longer allowed to flow.
Device Structure
FDU068AN03L is an enhancement mode MOSFET, meaning that current can only flow through the device if there is a bias voltage applied to the gate. It contains a symmetrical structure of n-type doped silicon strands connected by a common drain junction. The gate, drain and source terminals are connected to the appropriate contacts on the chip. The gate is then covered by a polysilicon gate electrode, below which the MOSFET channel is formed, composed of an oxide layer and the underlying semiconductor substrate.
Operation Modes
The operation of FDU068AN03L is determined by the gate-source voltage. When the gate-source voltage is below the threshold voltage, the device is in the cutoff state and current is not allowed to flow through. If the gate-source voltage is greater than the threshold voltage, the device is in the enhancement mode, allowing current to flow through the source-drain path. If the gate-source voltage is further increased, the device enters the saturation mode, which is the maximum level of current that the device can handle.
Conclusion
FDU068AN03L is a single MOSFET product from Infineon Technologies suitable for a variety of applications. It is an enhancement mode FET that can be used for peak current limiting in AC/DC and DC/DC converters, power management, as well as audio and motor controllers. The device consists of a source, drain, gate and channel, and its operation is based on the principle of field effect transistors. It operates in three different modes: the cutoff state, the enhancement mode and the saturation mode.

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