Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	IPAK (TO-251)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 42W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1760pF @ 40V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	79nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	29 mOhm @ 7.7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	7.7A (Ta)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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FDU3580 Application Field and Working Principle

Introduction

FDU3580 is a type of MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) used in a variety of applications. It is a special type of single-gate MOSFET (SGMOSFET) and belongs to the category of the field-effect transistor family. FDU3580 is equipped with low-on resistance, superior electrical performance, excellent thermal characteristics, and low capacitance, making it suitable for high-power or high-frequency applications.

Working Principle and Key Parameters

The working principle of the FDU3580 can be understood by considering its electrostatic field which is generated by an input voltage applied at the gate terminal. The gate-to-source voltage (VGS) applied to the FDU3580 distinguishes it from other types of SGMOSFETs. The gate-to-drain voltage (VGD) also corresponds to the target voltage level of the signal. When the voltage of the gate electrode is above the threshold voltage (VTH), the FDU3580 will be in the saturation region and conduct current. The degree of saturation is determined by the values of the VGD.The key parameters of the FDU3580 are its source-drain current (ID), gate input capacitance (CGS), drain-source output capacitance (CDS), transconductance (gm), and on-resistance (Ron). The transconductance (gm) is a measure of the strength of the transistor and is determined by the number of electrons (or holes) flowing through the device. The on-resistance (Ron) is also an important parameter for determining the device\'s performance, and is determined by the number of electrons (or holes) flowing through the device.

Applications

FDU3580 is mainly used in power and high-speed digital applications. Its low-on resistance and superior electrical performance make it suitable for switching applications such as in power supplies, dc-dc converters, power amplifiers, radio transmitters and receivers, and high-speed logic circuits. Its low input capacitance and low transconductance make it ideal for microwave circuits for frequency conversion applications. Its low output capacitance makes it suitable for high-speed switching applications such as data converters, high-speed detectors, and analog multiplexers. FDU3580 can also be used in motion control applications such as optical sensors, actuators, and robotic arms.

Conclusion

FDU3580 is a single-gate MOSFET which has excellent electrical performance, low-on resistance, and low capacitance. It is suitable for high-power or high-frequency applications, particularly in power and high-speed digital applications. Its low-on resistance and excellent electrical performance make it suitable for switching applications, and its low input and output capacitances make it suitable for microwave circuits and high-speed switching applications. It can also be used in motion control applications.

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