FDZ191P Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1.5V @ 250µA
Package / Case:	6-UFBGA, WLCSP
Supplier Device Package:	6-WLCSP
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.9W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	800pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	85 mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	3A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<p>The FDZ191P is a depletion type field-effect transistor (FET) with a micron-level thickness. It is commonly used as a small signal amplifier, variable resistor, switch and noise suppression. It has excellent linearity, low noise and distortion, and high gain.</p><p>This device is an enhancement-type MOSFET with two P-channel terminals, Drain (D) and Gate (G), and a single N-channel terminal, Source (S). The FDZ191P has high input impedance and low output impedance, making it ideal for a wide range of applications. It is primarily used for audio and video signal amplification, switching and noise suppression, and as a variable resistor.</p><p>The FDZ191P is mainly composed of a substrate, source, gate, and drain. The source, gate, and drain are made up of polysilicon, which acts as a semiconductor. The substrate on the other hand is made up of silicon dioxide. This forms an insulating layer between the source, gate, and drain, thus controlling the flow of electrons. The gate is connected to a voltage source which provides an electrical field that either allows or prevents electrons to flow through the channel between the source and the drain.</p><p>The FDZ191P is generally operated by applying a voltage to the Gate terminal, causing the potential barrier at the silicon dioxide-polysilicon junction to decrease. When the Gate voltage is increased, the potential barrier is further reduced and more electrons can flow through the channel and the device is said to be in the “on” state. As the Gate voltage is reduced, the electron flow becomes impeded and the device is said to be in the “off” state.</p><p>When the FDZ191P is turned on, a current travels from the source to the drain through the channel. This current is controlled by the voltage applied to the gate, allowing for precise control of the signal and a high gain. In addition, the FDZ191P has a linear response in the “on” state, meaning that it will output a predictable voltage when a given voltage is applied to the Gate terminal.</p><p>When the FDZ191P is turned off, the current flow is blocked and the signal is suppressed. This makes the FDZ191P an effective component for noise reduction in audio and video circuits. Additionally, the low power consumption of this device makes it well suited for portable applications and as an active component in low-power circuits.</p><p>In summary, the FDZ191P is an excellent choice for small signal amplification, noise reduction, and as a switch or variable resistor. Thanks to its excellent linearity and low noise characteristics, it is widely used in audio and video circuits. In addition, its small size and low power consumption makes it well suited for portable and low power applications.</p>

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