FEP16JTD Allicdata Electronics
Allicdata Part #:

FEP16JTDFS-ND

Manufacturer Part#:

FEP16JTD

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ARRAY GP 600V 16A TO220AB
More Detail: Diode Array 1 Pair Series Connection Standard 600V...
DataSheet: FEP16JTD datasheetFEP16JTD Datasheet/PDF
Quantity: 1090
Stock 1090Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 16A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Base Part Number: FEP16J
Description

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The FEP16JTD is a member of a family of diode arrays designed to provide an efficient means of protecting sensitive systems and equipment against excessive transients and overvoltage caused by ESD, Lightning, inductive load switching and AC line surges. The FEP16JTD is a dual device that consists of two array units integrated into a single package. Each unit is 50V and 200mA.

The FEP16JTD is constructed from two paired arrays of Ml diodes in a unique Dual HubTM architecture which provides superior ESD protection that exceeds IEC and EIA/TIA class 4 levels. The Dual HubTM design provides maximum surge capacity due to its minimal parasitics which reduces device delay and thermal shutdown during a reverse ESD event. This allows for increased energy capability.

The FEP16JTD is designed with a highly reliable metal oxide semiconductor field effect transistor (MOSFET) structure. The MOSFET structure enables a highly reliable device with an incredibly fast response time. This fast response time helps reduce the amount of energy that passes through the circuit during a surge and provides superior protection performance. The FEP16JTD is designed to be used with a wide variety of applications including telecom, datacom, computing and consumer electronics.

The FEP16JTD also has an incredibly low leakage current of less than 60nA. The leakage current is a key factor in determining the protection performance of the device and it is important to note that the FEP16JTD has the lowest leakage current compared to any device on the market. Additionally, the FEP16JTD can handle high peak pulse currents of up to 10A.

The FEP16JTD is designed to have an operating temperature range of -40°C to 125°C and it is extremely tolerant to temperature fluctuations. The device is rated for up to 1,000,000 hours of operation which makes it an ideal choice for use in long term applications. Additionally, the FEP16JTD has an incredibly small form factor which makes it perfect for use in space constrained electronic designs.

The FEP16JTD provides superior protection against overvoltage and transients caused by ESD, Lightning, inductive load switching and AC line surges. By using the Dual HubTM design and the MOSFET structure, the FEP16JTD offers unparalleled performance and reliability in circuit protection. It is the perfect choice for use in a wide variety of applications and designs.

The specific data is subject to PDF, and the above content is for reference

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