Allicdata Part #: | FESB16BTHE3/81-ND |
Manufacturer Part#: |
FESB16BTHE3/81 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 16A TO263AB |
More Detail: | Diode Standard 100V 16A Surface Mount TO-263AB |
DataSheet: | FESB16BTHE3/81 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 16A |
Voltage - Forward (Vf) (Max) @ If: | 975mV @ 16A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | 175pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | FESB16B |
Description
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Introduction
FESB16BTHE3/81 is a single diode rectifier manufactured by Siemens. It is an ideal solution for converting an electronic signal or voltage into direct current (DC) or an alternating current (AC) form. It is available in various package sizes and can be used in a wide range of applications. This article will discuss the application field and working principle of the FESB16BTHE3/81.Application Field
The FESB16BTHE3/81 is ideal for noise reduction, as well as for providing a smooth DC voltage supply. It is used in a wide range of industries, including automotive, power, lighting, charging, home appliances, medical, and more. In addition, it can be used in a variety of AC/DC circuits to provide power for various devices, such as resistors, capacitors, transistors, and other components.Working Principle
The FESB16BTHE3/81 is a single diode rectifier, meaning that it converts an AC input to DC output. The working principle of this device can be explained by the following steps: 1. The FESB16BTHE3/81 is composed of a P-type semiconductor and an N-type semiconductor. 2. When the AC voltage is applied to the diode, the P-type semiconductor acts like an insulator and only allows electrical current to flow through the N-type semiconductor. 3. The current then passes through the P-type semiconductor and separates the current into negative and positive charges. 4. These charges are then attracted toward the negative and positive terminals of the diode, respectively. 5. This creates a current flow in the specified direction, and thus, the AC input is converted to DC output.Conclusion
The FESB16BTHE3/81 is a single diode rectifier manufactured by Siemens and is used in many industries. It converts an AC input to DC output by passing the current through two semiconductors, separating it into positive and negative charges, and creating a current flow in the desired direction. This product is ideal for reducing noise and providing a smooth DC voltage supply.The specific data is subject to PDF, and the above content is for reference
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FESB8BTHE3/45 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
FESB8CTHE3/45 | Vishay Semic... | 0.49 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
FESB8FTHE3/45 | Vishay Semic... | 0.51 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
FESB8GTHE3/45 | Vishay Semic... | 0.45 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
FESB8HTHE3/45 | Vishay Semic... | 0.51 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
FESB8JTHE3/45 | Vishay Semic... | 0.51 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
FESB8DTHE3/45 | Vishay Semic... | 0.47 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
FESB8AT-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
FESB8BT-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
FESB8CT-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
FESB8DT-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
FESB8FT-E3/81 | Vishay Semic... | 0.54 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
FESB8GT-E3/81 | Vishay Semic... | 0.54 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
FESB8HT-E3/81 | Vishay Semic... | 0.54 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
FESB8JT-E3/81 | Vishay Semic... | 0.6 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
FESB8BTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
FESB8CTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
FESB8FTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
FESB8GTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
FESB8HTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
FESB8JTHE3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 8A TO... |
FESB8DTHE3/81 | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
FESB16AT-E3/45 | Vishay Semic... | 0.6 $ | 1000 | DIODE GEN PURP 50V 16A TO... |
FESB16BT-E3/45 | Vishay Semic... | 0.69 $ | 1000 | DIODE GEN PURP 100V 16A T... |
FESB16CT-E3/45 | Vishay Semic... | 0.6 $ | 1000 | DIODE GEN PURP 150V 16A T... |
FESB16FT-E3/45 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 300V 16A T... |
FESB16GT-E3/45 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 400V 16A T... |
FESB16JT-E3/45 | Vishay Semic... | 1.34 $ | 1000 | DIODE GEN PURP 600V 16A T... |
FESB16FT-E3/81 | Vishay Semic... | 0.65 $ | 1000 | DIODE GEN PURP 300V 16A T... |
FESB16HT-E3/81 | Vishay Semic... | 0.65 $ | 1000 | DIODE GEN PURP 500V 16A T... |
FESB16GT-E3/81 | Vishay Semic... | 0.73 $ | 1000 | DIODE GEN PURP 400V 16A T... |
FESB16AT-E3/81 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 50V 16A TO... |
FESB16BT-E3/81 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 100V 16A T... |
FESB16CT-E3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 150V 16A T... |
FESB16DT-E3/81 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 200V 16A T... |
FESB16ATHE3/45 | Vishay Semic... | 0.74 $ | 1000 | DIODE GEN PURP 50V 16A TO... |
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