| Allicdata Part #: | FESB8BT-E3/81-ND |
| Manufacturer Part#: |
FESB8BT-E3/81 |
| Price: | $ 0.52 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 100V 8A TO263AB |
| More Detail: | Diode Standard 100V 8A Surface Mount TO-263AB |
| DataSheet: | FESB8BT-E3/81 Datasheet/PDF |
| Quantity: | 1000 |
| 800 +: | $ 0.46780 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 100V |
| Current - Average Rectified (Io): | 8A |
| Voltage - Forward (Vf) (Max) @ If: | 950mV @ 8A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 35ns |
| Current - Reverse Leakage @ Vr: | 10µA @ 100V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263AB |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Base Part Number: | FESB8B |
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。Diodes allow current to flow in one direction and are used in many areas of electronics, from switching applications to rectifiers in AC-DC power supplies. Rectifiers are a type of diode used to change an AC input signal into DC output. The FESB8BT-E3/81 is a type of single-phase rectifier used in rectifying AC to DC applications. It features an avalanche TO-220AB package and has a wide range of applications including power supplies, over-voltage protection, battery charging, motor control, and more.
The FESB8BT-E3/81 single-phase rectifier utilizes Schottky diode technology. Schottky diodes are commonly used in rectifier applications due to their low forward voltage drop as compared to p-type junction diodes, which results in higher efficiency in power supplies. The device consists of a single series-connected Schottky diode in a 3-pin package. This series connection drastically reduces the reverse-recovery time and inherent capacitance in a Schottky diode.
The working principle of a Schottky diode is based on the properties of a semiconductor junction. When a potential difference is applied across the junction, the electrons in the n-side of the semiconductor will flow towards the p-side, thus creating a conduction channel. The reverse breakdown voltage is determined by the reverse-biased depletion layer width. The forward voltage drop is controlled by the electron mobility in the semiconductor, which is typically smaller than the hole mobility in the traditional p-n junction diode.
In the FESB8BT-E3/81 single-phase rectifier, the Schottky diode is connected in series with a TO-220AB package, with the anode of the diode connected to the source and the cathode connected to the ground. The two leads are connected in series and the output is connected to the ground. When an AC potential is applied, the Schottky diode will conduct, allowing current to flow in the circuit and allowing the AC voltage to be rectified into DC voltage. The AC input is then filtered and rectified, resulting in a DC output.
The FESB8BT-E3/81 single-phase rectifier is designed for use in a variety of applications, such as power supplies, over-voltage protection, battery charging, motor control, and more. It is suitable for use in a wide range of operating temperatures and can tolerate large input spikes. It also features excellent noise filtering properties, making it an ideal choice for applications requiring both low-loss and low noise. The FESB8BT-E3/81 is also compatible with a wide range of power transistors and integrated circuits, making it a highly versatile device.
In conclusion, the FESB8BT-E3/81 single-phase rectifier is well suited for a variety of applications, including power supplies, over-voltage protection, battery charging, motor control, and more. It utilizes Schottky diode technology, which provides excellent efficiency and low noise capabilities. Its wide compatibility range and high tolerance for input spikes makes it an ideal choice for a variety of applications. Its TO-220AB package provides excellent heat dissipation and ensures long-term reliability.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| FESB16DT-E3/81 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 200V 16A T... |
| FESB16GT-E3/45 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 400V 16A T... |
| FESB16BT-E3/45 | Vishay Semic... | 0.69 $ | 1000 | DIODE GEN PURP 100V 16A T... |
| FESB16BT-E3/81 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 100V 16A T... |
| FESB8BT-E3/45 | Vishay Semic... | 0.47 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
| FESB16ATHE3/81 | Vishay Semic... | 0.89 $ | 1000 | DIODE GEN PURP 50V 16A TO... |
| FESB8FTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
| FESB16FT-E3/81 | Vishay Semic... | 0.65 $ | 1000 | DIODE GEN PURP 300V 16A T... |
| FESB8GTHE3/45 | Vishay Semic... | 0.45 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
| FESB8GT-E3/45 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
| FESB16BTHE3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 16A T... |
| FESB16HTHE3/81 | Vishay Semic... | 0.89 $ | 1000 | DIODE GEN PURP 500V 16A T... |
| FESB16CTHE3/45 | Vishay Semic... | 0.74 $ | 1000 | DIODE GEN PURP 150V 16A T... |
| FESB16FT-E3/45 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 300V 16A T... |
| FESB8JTHE3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 8A TO... |
| FESB8DT-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
| FESB8CTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
| FESB16DT-E3/45 | Vishay Semic... | 1.2 $ | 1000 | DIODE GEN PURP 200V 16A T... |
| FESB8FTHE3/45 | Vishay Semic... | 0.51 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
| FESB8CT-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
| FESB8HT-E3/81 | Vishay Semic... | 0.54 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
| FESB16GTHE3/45 | Vishay Semic... | 0.85 $ | 1000 | DIODE GEN PURP 400V 16A T... |
| FESB16DTHE3/81 | Vishay Semic... | 0.89 $ | 1000 | DIODE GEN PURP 200V 16A T... |
| FESB16HT-E3/81 | Vishay Semic... | 0.65 $ | 1000 | DIODE GEN PURP 500V 16A T... |
| FESB8DTHE3/45 | Vishay Semic... | 0.47 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
| FESB8GTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
| FESB16AT-E3/81 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 50V 16A TO... |
| FESB16GTHE3/81 | Vishay Semic... | 0.89 $ | 1000 | DIODE GEN PURP 400V 16A T... |
| FESB8ATHE3/81 | Vishay Semic... | 0.89 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
| FESB8BTHE3/45 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
| FESB16FTHE3/45 | Vishay Semic... | 0.74 $ | 1000 | DIODE GEN PURP 300V 16A T... |
| FESB16JT-E3/81 | Vishay Semic... | 0.65 $ | 1000 | DIODE GEN PURP 600V 16A T... |
| FESB8BT-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
| FESB16DTHE3/45 | Vishay Semic... | 0.74 $ | 1000 | DIODE GEN PURP 200V 16A T... |
| FESB16CT-E3/45 | Vishay Semic... | 0.6 $ | 1000 | DIODE GEN PURP 150V 16A T... |
| FESB8BTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
| FESB8HTHE3/45 | Vishay Semic... | 0.51 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
| FESB16BTHE3/45 | Vishay Semic... | 0.85 $ | 1000 | DIODE GEN PURP 100V 16A T... |
| FESB8FT-E3/81 | Vishay Semic... | 0.54 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
| FESB16JTHE3/81 | Vishay Semic... | 0.89 $ | 1000 | DIODE GEN PURP 600V 16A T... |
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FESB8BT-E3/81 Datasheet/PDF