| Allicdata Part #: | FESB8DT-E3/45-ND |
| Manufacturer Part#: |
FESB8DT-E3/45 |
| Price: | $ 0.41 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 200V 8A TO263AB |
| More Detail: | Diode Standard 200V 8A Surface Mount TO-263AB |
| DataSheet: | FESB8DT-E3/45 Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 0.36932 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 200V |
| Current - Average Rectified (Io): | 8A |
| Voltage - Forward (Vf) (Max) @ If: | 950mV @ 8A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 35ns |
| Current - Reverse Leakage @ Vr: | 10µA @ 200V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263AB |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Base Part Number: | FESB8D |
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Diodes are essential components of an electronic circuit, providing a wide range of applications. Among them, rectifiers are widely used due to their ability to convert AC power into DC power and their high current capacity. The FESB8DT-E3/45 is a single schottky rectifier for high frequency switching applications, featuring a low forward voltage drop and high switching speed. This article will discuss the application field and working principle of the FESB8DT-E3/45.
Applications
The FESB8DT-E3/45 is suitable for a variety of applications due to its low forward voltage drop, high switching speed and low stored charge. It is primarily used for freewheeling and DC power applications. Its low forward voltage drop allows for high efficiency in power conversion applications, while its high switching speed allows for the fast switching of current in the load device. Additionally, its low stored charge properties make it highly suitable for applications requiring high reliability in high temperature or other hostile environments.
The FESB8DT-E3/45 can be used in high frequency switching converters, such as those used in power supplies and motor drives. It can also be used in negative-side freewheeling applications, providing active switch control for circuit protection and noise suppression. Its reverse blocking capability makes it ideal for line protection and transient voltage suppression. Finally, its uniform turn on characteristics are ideal for high frequency rectification in power factor correction applications.
Working Principle
The FESB8DT-E3/45 is a single schottky rectifier, which allows current to flow in one direction while blocking current in the opposite direction. This is accomplished by a PN junction, which acts like a switch that is opened or closed depending on the voltage difference between its two sides. When a positive voltage is applied to its positive side and a negative voltage is applied to its negative side, the diode is forward biased and presents a low resistance path for current to flow. When the voltage difference between its two sides is negative, the diode is reverse biased and presents a much higher resistance to prevent current from flowing.
The FESB8DT-E3/45 is a single schottky rectifier, meaning that its PN junction consists of two materials with different semiconductor properties. This enables it to have a lower forward voltage drop, higher switching speed and lower stored charge properties than standard rectifier diodes.
Conclusion
The FESB8DT-E3/45 is a single schottky rectifier designed for high frequency switching applications. Its low forward voltage drop, high switching speed and low stored charge properties make it suitable for a variety of applications such as freewheeling and DC power, high frequency switching converters, line protection and transient voltage suppression, and high frequency rectification in power factor correction applications. The working principle of the FESB8DT-E3/45 is based on its PN junction, which provides a low resistance path for current to flow when a positive voltage is applied to its positive side and a negative voltage is applied to its negative side.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| FESB16DT-E3/81 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 200V 16A T... |
| FESB16GT-E3/45 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 400V 16A T... |
| FESB16BT-E3/45 | Vishay Semic... | 0.69 $ | 1000 | DIODE GEN PURP 100V 16A T... |
| FESB16BT-E3/81 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 100V 16A T... |
| FESB8BT-E3/45 | Vishay Semic... | 0.47 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
| FESB16ATHE3/81 | Vishay Semic... | 0.89 $ | 1000 | DIODE GEN PURP 50V 16A TO... |
| FESB8FTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
| FESB16FT-E3/81 | Vishay Semic... | 0.65 $ | 1000 | DIODE GEN PURP 300V 16A T... |
| FESB8GTHE3/45 | Vishay Semic... | 0.45 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
| FESB8GT-E3/45 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
| FESB16BTHE3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 16A T... |
| FESB16HTHE3/81 | Vishay Semic... | 0.89 $ | 1000 | DIODE GEN PURP 500V 16A T... |
| FESB16CTHE3/45 | Vishay Semic... | 0.74 $ | 1000 | DIODE GEN PURP 150V 16A T... |
| FESB16FT-E3/45 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 300V 16A T... |
| FESB8JTHE3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 8A TO... |
| FESB8DT-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
| FESB8CTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
| FESB16DT-E3/45 | Vishay Semic... | 1.2 $ | 1000 | DIODE GEN PURP 200V 16A T... |
| FESB8FTHE3/45 | Vishay Semic... | 0.51 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
| FESB8CT-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
| FESB8HT-E3/81 | Vishay Semic... | 0.54 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
| FESB16GTHE3/45 | Vishay Semic... | 0.85 $ | 1000 | DIODE GEN PURP 400V 16A T... |
| FESB16DTHE3/81 | Vishay Semic... | 0.89 $ | 1000 | DIODE GEN PURP 200V 16A T... |
| FESB16HT-E3/81 | Vishay Semic... | 0.65 $ | 1000 | DIODE GEN PURP 500V 16A T... |
| FESB8DTHE3/45 | Vishay Semic... | 0.47 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
| FESB8GTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
| FESB16AT-E3/81 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 50V 16A TO... |
| FESB16GTHE3/81 | Vishay Semic... | 0.89 $ | 1000 | DIODE GEN PURP 400V 16A T... |
| FESB8ATHE3/81 | Vishay Semic... | 0.89 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
| FESB8BTHE3/45 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
| FESB16FTHE3/45 | Vishay Semic... | 0.74 $ | 1000 | DIODE GEN PURP 300V 16A T... |
| FESB16JT-E3/81 | Vishay Semic... | 0.65 $ | 1000 | DIODE GEN PURP 600V 16A T... |
| FESB8BT-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
| FESB16DTHE3/45 | Vishay Semic... | 0.74 $ | 1000 | DIODE GEN PURP 200V 16A T... |
| FESB16CT-E3/45 | Vishay Semic... | 0.6 $ | 1000 | DIODE GEN PURP 150V 16A T... |
| FESB8BTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
| FESB8HTHE3/45 | Vishay Semic... | 0.51 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
| FESB16BTHE3/45 | Vishay Semic... | 0.85 $ | 1000 | DIODE GEN PURP 100V 16A T... |
| FESB8FT-E3/81 | Vishay Semic... | 0.54 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
| FESB16JTHE3/81 | Vishay Semic... | 0.89 $ | 1000 | DIODE GEN PURP 600V 16A T... |
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FESB8DT-E3/45 Datasheet/PDF