FESB8HTHE3/81

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	500V
Current - Average Rectified (Io):	8A
Voltage - Forward (Vf) (Max) @ If:	1.5V @ 8A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	50ns
Current - Reverse Leakage @ Vr:	10µA @ 500V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263AB
Operating Temperature - Junction:	-55°C ~ 150°C

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FESB8HTHE3/81 is a single rectifier diode, which has a wide range of applications in diverse fields, such as power circuits and frequency converting. It is a high-power diode designed to provide reliable performance in harsh environments. In this article, we will discuss the application field and working principle of the FESB8HTHE3/81.The FESB8HTHE3/81 is primarily used for rectification of AC signals, and for protection of components from high voltage spikes and arcs. It is primarily used in power applications, such as in power supplies and in power conversion circuits. It is also used in frequency conversion circuits, such as in frequency multipliers, converters and transformers. The FESB8HTHE3/81 can handle up to 100A of current, making it suitable for high-power circuits.The FESB8HTHE3/81 has a high reverse break-down voltage of 280V, making it a suitable choice for protecting components from high-voltage surges. In addition, the device has a low forward voltage drop of just 0.3V, which is beneficial when the device is used in power circuits. The device also has a low thermal impedance, which helps keep the device cool during operation.In terms of its working principle, the FESB8HTHE3/81 operates on the principle of PN junction diode. A PN junction diode is a type of semiconductor device consisting of two layers of semiconductor material, a P-type layer and an N-type layer. When current is applied to the diode, charge carriers, in the form of electrons and holes, flow from the N-type material to the P-type material, creating a voltage drop, or a barrier, across the junction.The FESB8HTHE3/81 is designed to rectify AC current, or to convert AC current into DC current. When an AC voltage is applied to the diode, the voltage alternates between negative and positive cycles. During the positive cycle, the electrons flow in a single direction, creating a DC current. During the negative cycle, the electrons move in the opposite direction, and is stopped by the voltage barrier created by the PN junction. This allows only the positive voltage to pass through, creating the DC output.The FESB8HTHE3/81 also has a high surge current rating of 8A, making it suitable for use in high-current applications. In addition, the FESB8HTHE3/81 has a low reverse recovery time, which allows for improved efficiency when used in frequency converting and power supply applications.In conclusion, the FESB8HTHE3/81 is a single rectifier diode with a wide range of applications in diverse fields. It has a high reverse break-down voltage of 280V, making it suitable for protection of components from high-voltage surges. In addition, the device has a low forward voltage drop of 0.3V, and a low thermal impedance, making it suitable for high-power applications. The device operates on the principle of PN junction diode, and is designed to rectify AC current. The device also has a high surge current rating of 8A, making it suitable for use in high-current applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description