Allicdata Part #: | FESB8HTHE3/45-ND |
Manufacturer Part#: |
FESB8HTHE3/45 |
Price: | $ 0.51 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 500V 8A TO263AB |
More Detail: | Diode Standard 500V 8A Surface Mount TO-263AB |
DataSheet: | FESB8HTHE3/45 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.45850 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 500V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 500V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -55°C ~ 150°C |
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FESB8HTHE3/45 is a popular diode-rectifier device typically used in the electronic and electronic-mechanical fabrication and assembly processes. This device consists of a single diode and a rectifier, and is designed to convert alternating current (AC) signals into direct current (DC) signals. The single diode acts as a bridge rectifier, while the rectifier serves to provide a higher order of filtering and protection of the DC output by converting the AC signal into a low distortion DC signal.
FESB8HTHE3/45 is used in a variety of fields, including industrial, automotive, medical, communications, and aerospace applications. In particular, it is commonly used in applications requiring fast switching of high-power signals and high-speed low-noise operation. This device is well suited for use in the manufacture of printed circuit boards (PCB), as well as in the production of audio/video components, motor drive applications, and other electronics requiring high-reliability output.
FESB8HTHE3/45 can be used to achieve an efficient alternative to traditional resistor and capacitor combinations when precise voltage or current regulation is required. Additionally, this device improves efficiency by reducing the number of components required to construct the circuit and reducing the amount of heat generated during operation. By using this device, the greater output current and power supply can be obtained compared to other similar diode-rectifier devices, making it a popular choice for various electrical and electronic applications.
The FESB8HTHE3/45 is designed to operate at very high speeds with very low noise. It is also capable of switching signals in a very low voltage environment. This makes the device ideal for use with sensitive circuitry and in applications where a high degree of precision is required. The FESB8HTHE3/45 can also be used for pulse width modulation (PWM) converters, allowing for improved filtering of high-frequency signals. The single diode mode of FESB8HTHE3/45 provides a high input-to-output current transfer ratio, allowing for improved current handling capacity.
The FESB8HTHE3/45 is also known for its low reverse leakage current. This leakage current is virtually nonexistent when the device is operating at high temperature, making it an ideal choice for use in high-temperature environments. Additionally, the device has a low standing power consumption, making it a particularly efficient device for various applications. The FESB8HTHE3/45 is also known for its long-term reliability, making it a popular choice for a wide range of applications in which long-term reliability is paramount.
Overall, the FESB8HTHE3/45 is an extremely reliable, efficient, and high-speed diode-rectifier device. It is well suited for use in a variety of fields, including industrial, automotive, medical, communications, and aerospace applications. It is capable of handling high-power signals, low-noise operation, and a high degree of precision. Additionally, the FESB8HTHE3/45 features a low reverse leakage current, low standing power consumption, and long-term reliability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FESB8BT-E3/45 | Vishay Semic... | 0.47 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
FESB8DT-E3/45 | Vishay Semic... | 0.41 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
FESB8GT-E3/45 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
FESB8JT-E3/45 | Vishay Semic... | 0.49 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
FESB8BTHE3/45 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
FESB8CTHE3/45 | Vishay Semic... | 0.49 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
FESB8FTHE3/45 | Vishay Semic... | 0.51 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
FESB8GTHE3/45 | Vishay Semic... | 0.45 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
FESB8HTHE3/45 | Vishay Semic... | 0.51 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
FESB8JTHE3/45 | Vishay Semic... | 0.51 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
FESB8DTHE3/45 | Vishay Semic... | 0.47 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
FESB8AT-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
FESB8BT-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
FESB8CT-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
FESB8DT-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
FESB8FT-E3/81 | Vishay Semic... | 0.54 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
FESB8GT-E3/81 | Vishay Semic... | 0.54 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
FESB8HT-E3/81 | Vishay Semic... | 0.54 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
FESB8JT-E3/81 | Vishay Semic... | 0.6 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
FESB8BTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
FESB8CTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
FESB8FTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
FESB8GTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
FESB8HTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
FESB8JTHE3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 8A TO... |
FESB8DTHE3/81 | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
FESB16AT-E3/45 | Vishay Semic... | 0.6 $ | 1000 | DIODE GEN PURP 50V 16A TO... |
FESB16BT-E3/45 | Vishay Semic... | 0.69 $ | 1000 | DIODE GEN PURP 100V 16A T... |
FESB16CT-E3/45 | Vishay Semic... | 0.6 $ | 1000 | DIODE GEN PURP 150V 16A T... |
FESB16FT-E3/45 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 300V 16A T... |
FESB16GT-E3/45 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 400V 16A T... |
FESB16JT-E3/45 | Vishay Semic... | 1.34 $ | 1000 | DIODE GEN PURP 600V 16A T... |
FESB16FT-E3/81 | Vishay Semic... | 0.65 $ | 1000 | DIODE GEN PURP 300V 16A T... |
FESB16HT-E3/81 | Vishay Semic... | 0.65 $ | 1000 | DIODE GEN PURP 500V 16A T... |
FESB16GT-E3/81 | Vishay Semic... | 0.73 $ | 1000 | DIODE GEN PURP 400V 16A T... |
FESB16AT-E3/81 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 50V 16A TO... |
FESB16BT-E3/81 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 100V 16A T... |
FESB16CT-E3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 150V 16A T... |
FESB16DT-E3/81 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 200V 16A T... |
FESB16ATHE3/45 | Vishay Semic... | 0.74 $ | 1000 | DIODE GEN PURP 50V 16A TO... |
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