FESB8BTHE3/81 Allicdata Electronics
Allicdata Part #:

FESB8BTHE3/81-ND

Manufacturer Part#:

FESB8BTHE3/81

Price: $ 0.55
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 100V 8A TO263AB
More Detail: Diode Standard 100V 8A Surface Mount TO-263AB
DataSheet: FESB8BTHE3/81 datasheetFESB8BTHE3/81 Datasheet/PDF
Quantity: 1000
800 +: $ 0.49017
Stock 1000Can Ship Immediately
$ 0.55
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: FESB8B
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes, rectifiers, and single devices are an important part of the modern electrical and electronic equipment industry. Many of these components are found in the FESB8BTHE3/81 application field and have been developed to give the user an efficient, reliable, and safe power supply. The purpose of this article is to explain the working principle of the FESB8BTHE3/81 and its applications in the field.

The FESB8BTHE3/81 is a silicon-controlled rectifier, or SCR, which is a type of power control device made from semiconductor materials. This device operates in a very specific way. A small voltage is applied to the gate of the SCR, which triggers the device to conduct current through the main two electrodes. SCRs are designed to be normally off and, when triggered, remain on until the current is stopped either by reducing the applied voltage or by applying a negative voltage to the gate. This makes the device particularly suited for controlling current, such as in power supplies, motor controls, and home appliances.

The FESB8BTHE3/81 is designed to dissipate a maximum of 8 amperes at a reverse voltage of 400 volts. It has a forward voltage drop of 3.2 volts at 8 amperes of current and a reverse leakage of 1 microampere at the same current level. This makes the device ideal for applications that require low losses or a high current capacity with reduced switching losses. Additionally, it can be connected to a potentiometer which allows the device to be operated at a lower DC current level, providing the user with more control over the current.

The FESB8BTHE3/81 is typically used in applications such as AC motor speed control, AC phase angle control, converter control, AC dimming control, and high-voltage DC converter control. It is also an important component in AC to DC converters, used in providing power from alternate sources such in solar arrays or wind turbines. The device can be used alone or with other power control components such as thyristors or triacs.

In terms of safety and reliability, the FESB8BTHE3/81 has been proven to be a reliable and efficient component. The device has a high surge current capability and is self-limiting, which helps to protect it from over-currents. The device also has a low leakage current, which helps to reduce power losses and prolong the life of the component. Moreover, the device features an insulated plastic package that helps to reduce electrical hazards.

The FESB8BTHE3/81 is an invaluable component to many applications and has been made with the intention of providing enhanced performance and a robust construction. By understanding the device’s working principle and its applications, the user can make an informed decision about which component is the best for their purposes. The device’s excellent performance and its ability to control power with precision make it a favorite choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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FESB8AT-E3/81 Vishay Semic... 0.52 $ 1000 DIODE GEN PURP 50V 8A TO2...
FESB8BT-E3/81 Vishay Semic... 0.52 $ 1000 DIODE GEN PURP 100V 8A TO...
FESB8CT-E3/81 Vishay Semic... 0.52 $ 1000 DIODE GEN PURP 150V 8A TO...
FESB8DT-E3/81 Vishay Semic... 0.52 $ 1000 DIODE GEN PURP 200V 8A TO...
FESB8FT-E3/81 Vishay Semic... 0.54 $ 1000 DIODE GEN PURP 300V 8A TO...
FESB8GT-E3/81 Vishay Semic... 0.54 $ 1000 DIODE GEN PURP 400V 8A TO...
FESB8HT-E3/81 Vishay Semic... 0.54 $ 1000 DIODE GEN PURP 500V 8A TO...
FESB8JT-E3/81 Vishay Semic... 0.6 $ 1000 DIODE GEN PURP 600V 8A TO...
FESB8BTHE3/81 Vishay Semic... 0.55 $ 1000 DIODE GEN PURP 100V 8A TO...
FESB8CTHE3/81 Vishay Semic... 0.55 $ 1000 DIODE GEN PURP 150V 8A TO...
FESB8FTHE3/81 Vishay Semic... 0.56 $ 1000 DIODE GEN PURP 300V 8A TO...
FESB8GTHE3/81 Vishay Semic... 0.56 $ 1000 DIODE GEN PURP 400V 8A TO...
FESB8HTHE3/81 Vishay Semic... 0.56 $ 1000 DIODE GEN PURP 500V 8A TO...
FESB8JTHE3/81 Vishay Semic... -- 1000 DIODE GEN PURP 600V 8A TO...
FESB8DTHE3/81 Vishay Semic... 0.59 $ 1000 DIODE GEN PURP 200V 8A TO...
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FESB16CT-E3/45 Vishay Semic... 0.6 $ 1000 DIODE GEN PURP 150V 16A T...
FESB16FT-E3/45 Vishay Semic... 0.71 $ 1000 DIODE GEN PURP 300V 16A T...
FESB16GT-E3/45 Vishay Semic... 0.71 $ 1000 DIODE GEN PURP 400V 16A T...
FESB16JT-E3/45 Vishay Semic... 1.34 $ 1000 DIODE GEN PURP 600V 16A T...
FESB16FT-E3/81 Vishay Semic... 0.65 $ 1000 DIODE GEN PURP 300V 16A T...
FESB16HT-E3/81 Vishay Semic... 0.65 $ 1000 DIODE GEN PURP 500V 16A T...
FESB16GT-E3/81 Vishay Semic... 0.73 $ 1000 DIODE GEN PURP 400V 16A T...
FESB16AT-E3/81 Vishay Semic... 0.71 $ 1000 DIODE GEN PURP 50V 16A TO...
FESB16BT-E3/81 Vishay Semic... 0.71 $ 1000 DIODE GEN PURP 100V 16A T...
FESB16CT-E3/81 Vishay Semic... -- 1000 DIODE GEN PURP 150V 16A T...
FESB16DT-E3/81 Vishay Semic... 0.71 $ 1000 DIODE GEN PURP 200V 16A T...
FESB16ATHE3/45 Vishay Semic... 0.74 $ 1000 DIODE GEN PURP 50V 16A TO...
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