Allicdata Part #: | FESB16CTHE3/45-ND |
Manufacturer Part#: |
FESB16CTHE3/45 |
Price: | $ 0.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 150V 16A TO263AB |
More Detail: | Diode Standard 150V 16A Surface Mount TO-263AB |
DataSheet: | FESB16CTHE3/45 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.66183 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 150V |
Current - Average Rectified (Io): | 16A |
Voltage - Forward (Vf) (Max) @ If: | 975mV @ 16A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 10µA @ 150V |
Capacitance @ Vr, F: | 175pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | FESB16C |
Description
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Introduction:FESB 16CTHE3/45 Rectifier is a single diode rectifier that is widely used in a variety of applications. It has a peak repetitive reverse voltage of 45V and is capable of passing current up to 16 A, making it a suitable choice for high power applications. The FESB 16CTHE3/45 Rectifier is designed and manufactured by FESB Co., Ltd., one of the most reliable semiconductor component manufacturer.Application Field:The FESB 16CTHE3/45 Rectifier has a wide range of applications, such as in automotive, industrial, and commercial fields. As it is capable of passing high current levels and has a high peak reverse voltage capacity, it is a suitable choice for use in DC-DC converters, battery chargers, and switching power supplies. It can also be used in various circuit applications, such as in AC inverters, traction motors and energy storage systems, LED lighting systems, high voltage switching circuits, motor drive circuits, and solar inverters.Working Principle:The FESB 16CTHE3/45 Rectifier works by allowing electric current to flow in only one direction, from the anode to the cathode. It operates based on the principle of PN junction diode, which is a semiconductor device that consists of two layers of semiconductor material, each having a different type of impurity. There are two types of PN junction diodes: forward biased and reversed biased. In the forward bias, the anode is connected to a positive voltage and the cathode is connected to a negative voltage, both of which attract the majority charge carriers and forward bias the diode. When the PN junction diode is given a voltage, current starts to flow in it, which is in the forward direction only and this is known as forward conduction. Conversely, in the reverse bias, the opposite happens and it inhibits electric current flow, thereby making it a rectifier device.Advantages:The FESB 16CTHE3/45 Rectifier offers several advantages, as compared to other rectifier devices. Firstly, it has a high current rating of 16 A, which is suitable for use in high power applications. Additionally, its high peak reverse voltage of 45V makes it a suitable choice for applications where the voltage is expected to exceed the specified limit. Furthermore, it is a low-cost rectifier that offers long-term performance and stability. Moreover, it is small in size and thus can be easily integrated into the circuit board.Conclusion:The FESB 16CTHE3/45 Rectifier is a versatile piece of semiconductor device that is suitable for a wide range of applications. It has a high peak reverse voltage rating of 45V and a strong enough current rating of 16 A, making it a great choice for anyone looking for a reliable rectifier device. Moreover, its size and cost makes it a welcome addition to any circuit application.The specific data is subject to PDF, and the above content is for reference
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FESB8BT-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
FESB8CT-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
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FESB8FT-E3/81 | Vishay Semic... | 0.54 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
FESB8GT-E3/81 | Vishay Semic... | 0.54 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
FESB8HT-E3/81 | Vishay Semic... | 0.54 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
FESB8JT-E3/81 | Vishay Semic... | 0.6 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
FESB8BTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
FESB8CTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
FESB8FTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
FESB8GTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
FESB8HTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
FESB8JTHE3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 8A TO... |
FESB8DTHE3/81 | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
FESB16AT-E3/45 | Vishay Semic... | 0.6 $ | 1000 | DIODE GEN PURP 50V 16A TO... |
FESB16BT-E3/45 | Vishay Semic... | 0.69 $ | 1000 | DIODE GEN PURP 100V 16A T... |
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FESB16FT-E3/45 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 300V 16A T... |
FESB16GT-E3/45 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 400V 16A T... |
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FESB16FT-E3/81 | Vishay Semic... | 0.65 $ | 1000 | DIODE GEN PURP 300V 16A T... |
FESB16HT-E3/81 | Vishay Semic... | 0.65 $ | 1000 | DIODE GEN PURP 500V 16A T... |
FESB16GT-E3/81 | Vishay Semic... | 0.73 $ | 1000 | DIODE GEN PURP 400V 16A T... |
FESB16AT-E3/81 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 50V 16A TO... |
FESB16BT-E3/81 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 100V 16A T... |
FESB16CT-E3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 150V 16A T... |
FESB16DT-E3/81 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 200V 16A T... |
FESB16ATHE3/45 | Vishay Semic... | 0.74 $ | 1000 | DIODE GEN PURP 50V 16A TO... |
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