FESB16JT-E3/81 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	600V
Current - Average Rectified (Io):	16A
Voltage - Forward (Vf) (Max) @ If:	1.5V @ 16A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	50ns
Current - Reverse Leakage @ Vr:	10µA @ 600V
Capacitance @ Vr, F:	145pF @ 4V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263AB
Operating Temperature - Junction:	-65°C ~ 150°C

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Introduction

FESB16JT-E3/81 is a single genarator rectifier diode with fast recovery from United Silicon. It features a low forward voltage drop, fast recovery time and high switching speed, making it a great choice for power supply applications. The device also exhibits high reliability and thermal resistance for a variety of applications. In this article, we will discuss the applications of the FESB16JT-E3/81, as well as its working principle.

Applications

The FESB16JT-E3/81 is suitable for a variety of applications, including:

• Switching power supplies
• DC/DC converters
• Lighting applications
• Battery chargers
• Power inverters
• Solar power systems
• High-frequency circuits

Working Principle

The FESB16JT-E3/81 is a fast recovery device, so it quickly recovers after passing a high current. This means that it can be used for high-frequency switching applications, as it can quickly turn on and off.The device consists of two parts: the anode and the cathode. When a positive voltage is applied to the anode and a negative voltage to the cathode, current will flow through the diode. This is known as forward bias. When a negative voltage is applied to the anode and a positive voltage to the cathode, no current will flow, and this is known as reverse bias.

Conclusion

The FESB16JT-E3/81 is a single genarator rectifier diode with fast recovery from United Silicon that is suitable for a variety of applications including switching power supplies, DC/DC converters, and lighting applications. The device features a low forward voltage drop, fast recovery time and high switching speed, as well as high reliability and thermal resistance. Its working principle is based on forward and reverse bias, which allows it to be used in high frequency switching applications.

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