Allicdata Part #: | FF1000R17IE4BOSA1-ND |
Manufacturer Part#: |
FF1000R17IE4BOSA1 |
Price: | $ 466.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 1700V 1000A |
More Detail: | IGBT Module 2 Independent 1700V 6250W Chassis Mo... |
DataSheet: | FF1000R17IE4BOSA1 Datasheet/PDF |
Quantity: | 1000 |
2 +: | $ 423.71300 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Power - Max: | 6250W |
Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 1000A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 81nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FF1000R17IE4BOSA1 is a type of Insulated Gate Bipolar Transistor (IGBT) module, which is a solid state power device which combines the advantages of both Bipolar Transistors (BJTs) and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs).
The FF1000R17IE4BOSA1 module uses two IGBTs coupled in inverse paralleland has a short circuit rated current of 1,700A. This mode has several benefits, from lower losses and current leakage to greater reliability.
The FF1000R17IE4BOSA1 IGBT module is designed for industrial and consumer applications such as motor control, Uninterruptible Power Supplies (UPS), and power transmission. It is ideal for applications that require high power density and efficiency, as well as fast switching and low switching losses.
The IGBT module works by using a voltage applied to the gate to control the flow of current between the collector and emitter, as with a MOSFET. With a BJT, the current flow is controlled by varying the base current. However, because the IGBT combines both of these elements, it has the advantages of both the BJT and the MOSFET.
The IGBT module has lower conduction losses than a standard MOSFET due to the reduced current required to drive the gate. Additionally, IGBTs generally have lower switching losses than a BJT as the gate charge is much lower. The IGBT module also has faster switching speeds; this is due to the smaller transistor size, which not only helps to reduce losses and improve efficiency but also helps to reduce the size of the component.
The IGBT module can be used for either high-side or low-side switch operation, due to its inverse parallel connection. This allows the FF1000R17IE4BOSA1 module to be used in a wide range of consumer and industrial applications. For example, the module could be used in motor control, solar inverters and Uninterruptible Power Supplies (UPS).
Overall, the FF1000R17IE4BOSA1 IGBT module offers a number of benefits over other power devices, such as lower losses and current leakage, faster switching speeds and greater reliability. The module is suitable for a wide range of consumer and industrial applications, due to its inverse paralleland compact size.
The specific data is subject to PDF, and the above content is for reference
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