Allicdata Part #: | FF100R12KS4HOSA1-ND |
Manufacturer Part#: |
FF100R12KS4HOSA1 |
Price: | $ 57.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 1700V 1000A |
More Detail: | IGBT Module 2 Independent 1200V 150A 780W Chassis... |
DataSheet: | FF100R12KS4HOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 52.12050 |
Specifications
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 150A |
Power - Max: | 780W |
Vce(on) (Max) @ Vge, Ic: | 3.7V @ 15V, 100A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 650nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Description
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.Transistors - IGBTs - Modules
The FF100R12KS4HOSA1 is a high power semiconductor module manufactured by Infineon. It uses IGBTs (Insulated Gate Bipolor Transistor) technology to manage high power flows. This type of module is generally used in applications that require high power motor control, fast switching, and moderate to high switching frequencies.
This module is configured as a half-bridge - two IGBTs in a single package - giving it the capacity to switch high voltages and currents. The capacitors featured in the device protect the module from surge voltages, which makes it ideal for applications with frequent power outages or rapid voltage changes. The FF100R12KS4HOSA1 can also be used as a switch for AC/DC power converters and phase-controlled rectifiers.
The device\'s working principle involves the use of an insulated gate. When this gate is provided with a voltage, a current is created in the IGBT. This current activates the IGBT, allowing current to flow from one terminal to the other. This on/off sequence is repeated at regular intervals, allowing the user to regulate the amount of power transferred.
Since the IGBT is semiconductor-based, it is able to switch faster than other components. This type of switching technology is often used in applications where a fast response and high power are required, such as electric vehicles and server systems. In addition, FF100R12KS4HOSA1 features an insulated gate with a very low on-state voltage, which helps reduce power losses.
The device is well-suited for applications that require high-power transfer and a fast response. Its small size and light weight also make it an attractive option for applications that require a compact and efficient solution. The high power levels, fast response, and low on-state voltage make it well-suited for motor control, AC/DC power conversion, and phase-controlled rectification.
The FF100R12KS4HOSA1 is a powerful and efficient semiconductor module that uses IGBTs technology to provide high power switching. Its insulated gate feature and fast response rate make it ideal for applications where fast switching and high power are required.
The specific data is subject to PDF, and the above content is for reference
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