Allicdata Part #: | FF1000R17IE4DB2BOSA1-ND |
Manufacturer Part#: |
FF1000R17IE4DB2BOSA1 |
Price: | $ 514.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 1700V 1000A |
More Detail: | IGBT Module 2 Independent 1700V 6250W Chassis Mo... |
DataSheet: | FF1000R17IE4DB2BOSA1 Datasheet/PDF |
Quantity: | 1000 |
2 +: | $ 467.35000 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Power - Max: | 6250W |
Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 1000A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 81nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Application Field and Working Principle of FF1000R17IE4DB2BOSA1
FF1000R17IE4DB2BOSA1 is a low-voltage, low-loss, high- efficient and fast-switching Insulated Gate Bipolar Transistor (IGBT) module. It has the characteristics of both a power MOSFET and a bipolar power transistor and acts as a switch which can be controlled much easier than a bipolar transistor. This module has enough heavy and fast current-carrying capability, making it an ideal choice for power electronics applications.
FF1000R17IE4DB2BOSA1 is suitable for use in a wide range of applications, such as motor control in sewing machines, robotic tools, and home appliances. It can also be used in frequency conversion control of elevators, buses, and trains. Furthermore, it is widely used in solar power generation, wind power generation, and UPS systems. In brief, this IGBT module is suitable for various kinds of electrical and electronic equipment that requires reliable high-efficiency switch control.
As for the working principle, FF1000R17IE4DB2BOSA1 is made up of two main components, a conductive channel and a gate. When voltage is applied on its gate, the conductive channel is activated, allowing current to flow. When the voltage is removed from the gate, the passage of current across the channel is stopped. This process is known as the “on” state and “off” state of the IGBT. The IGBT can be put in “on” state or “off” state by applying a suitable voltage or current on its gate.
The unique feature of this IGBT module is that it can support high input voltage with low switching losses. This allows the FF1000R17IE4DB2BOSA1 to operate efficiently and at a very high speed. Moreover, it is also characterized by its low ON-resistance and high current conduction capability, making it suitable for applications with high power demands.
In summary, FF1000R17IE4DB2BOSA1 is a low-voltage, low-loss and high-efficient IGBT module. It can be used in a variety of applications, such as motor control and frequency conversion control. Its working principle is based on using a conductive channel and a gate to control the passage of current. Its high input voltage and low switching losses make it suitable for high power applications.
The specific data is subject to PDF, and the above content is for reference
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