Allicdata Part #: | FF1000R17IE4DPB2BOSA1-ND |
Manufacturer Part#: |
FF1000R17IE4DPB2BOSA1 |
Price: | $ 545.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 1700V 1000A |
More Detail: | IGBT Module Trench Field Stop 2 Independent 1700V ... |
DataSheet: | FF1000R17IE4DPB2BOSA1 Datasheet/PDF |
Quantity: | 1000 |
3 +: | $ 496.08900 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 1000A |
Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 1000A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 81nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FF1000R17IE4DPB2BOSA1 is a type of insulated-gate bipolar transistor (IGBT) module designed to be used in most industrial applications. This device is capable of switching both fast and high-current signals in the presence of high temperatures and high-frequency rates. As an insulated-gate bipolar transistor, the FF1000R17IE4DPB2BOSA1 module has two distinct functions; it acts as both an electronic switch, allowing or blocking the flow of current and as a voltage controlled electronic device, adjusting its own characteristics according to the applied voltage. This makes the FF1000R17IE4DPB2BOSA1 well-suited for use in a wide variety of applications.
The FF1000R17IE4DPB2BOSA1 module is built to last the conditions of demanding industrial environments, ensuring high reliability and long operation time. It uses a unique heat sink technology to cool down critical components and prevent any heat distribution, ultimately ensuring a safe operation even in high temperatures. This makes this IGBT module ideally suited for industries such as automotive, welding, aviation, and others.
When looking at the working principle of the FF1000R17IE4DPB2BOSA1 module, it is important to keep in mind the structure of an IGBT module, which consists of two primary components; a dielectric between two electrodes, and a gate coupled to one of the electrodes. When voltage is applied to the gate, the electrons in the dielectric move towards the gate and form the channel through which current passes, thus allowing for conduction. In contrast, when the gate voltage is reduced, the electrons return back to their original positions, and therefore no current flows thus allowing for blocking. The FF1000R17IE4DPB2BOSA1 offers a unique combination of fast switching and high current capabilities, allowing it to be used in various applications.
The FF1000R17IE4DPB2BOSA1 is not only extremely reliable but also is highly efficient, further adding to its incredibly wide range of applications. Its fast switching capabilities allow it to be used in high-amperage applications such as electric motors and welding, while its high-current capabilities make it suitable for driving high-power loads such as lighting and industrial heating applications. Furthermore, its thermal design makes it capable of handling high temperatures for extended periods of time, ensuring reliable operation even in harsh environments.
The FF1000R17IE4DPB2BOSA1 is an all-around device, suitable for use in various industrial applications. Thanks to its reliable and efficient design and construction, it can be applied safely and reliably in a wide range of environments, ensuring long-lasting operation even in demanding conditions.
The specific data is subject to PDF, and the above content is for reference
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