Allicdata Part #: | FF100R12RT4HOSA1-ND |
Manufacturer Part#: |
FF100R12RT4HOSA1 |
Price: | $ 36.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 1700V 1000A |
More Detail: | IGBT Module Trench Field Stop 2 Independent 1200V ... |
DataSheet: | FF100R12RT4HOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 33.01260 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 100A |
Power - Max: | 555W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 100A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 630nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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Transistors - IGBTs - Modules
The FF100R12RT4HOSA1 is a module from the IGBTs family of transistors. It is primarily used for high-efficiency power applications. It is constructed from a base substrate and active area, and it features an integrated control unit (ICU) and welding-free pressure pins.
The FF100R12RT4HOSA1 is primarily used in inverters, converters, and drives, and may also be used in renewable energy systems and industrial motor control systems. It provides improved control and performance when compared to other IGBTs with a similar rating and size, including improved noise reduction and power savings.
Advantages
The FF100R12RT4HOSA1 offers several advantages which make it popular with engineers and manufacturers. These advantages include:
- High efficiency power conversion
- Excellent high-frequency performance
- High current capacity
- High voltage capability
- Excellent noise reduction
Working Principle
The FF100R12RT4HOSA1 is a type of transistor that has an insulated gate between its emitter and collector. This insulated gate can be voltage controlled, and it enables the transistor to switch on and off as required. The insulated gate works as a valve, allowing current to pass through when it is open, and blocking current when it is closed. This helps to improve the efficiency of the device and reduce noise.
The FF100R12RT4HOSA1 also features a built-in ICU, which enables users to control the on/off switching of the gate, and a welding-free pin connection system, which simplifies installation and assembly procedure. This ‘plug-and-play’ system makes it easy for users to control and manage the device, and it also reduces installation time.
Conclusion
With its high voltage capability, excellent noise reduction performance, and high current capacity, the FF100R12RT4HOSA1 is an ideal choice for power conversion applications. It features an integrated ICU and welding-free pressure pin connection system, which makes it easy to control and manage the transistor. Its advantages include improved control, high efficiency, and improved noise reduction performance.
The specific data is subject to PDF, and the above content is for reference
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