FF1000R17IE4PBOSA1 Allicdata Electronics
Allicdata Part #:

FF1000R17IE4PBOSA1-ND

Manufacturer Part#:

FF1000R17IE4PBOSA1

Price: $ 482.61
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 1700V 1000A
More Detail: IGBT Module Trench Field Stop 2 Independent 1700V ...
DataSheet: FF1000R17IE4PBOSA1 datasheetFF1000R17IE4PBOSA1 Datasheet/PDF
Quantity: 1000
3 +: $ 438.73200
Stock 1000Can Ship Immediately
$ 482.61
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 1000A
Power - Max: 1000000W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 81nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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Transistors - IGBTs - Modules are a type of semiconductor device that is used to control current flow within digital and analog circuits. A basic IGBT module includes a main transistor, which consists of two terminals – the collector and the emitter – as well as a control gate. The module allows for a high current to flow between the collector and the emitter terminals, while the control gate is used to regulate the current flow.

FF1000R17IE4PBOSA1 is an IGBT module which is used in applications involving energy conversion, such as switch mode power supplies, power factor correction, and inverters. The specific module is designed to offer superior switching performance characteristics in harsh environments and also reduce losses through its high speed switching. Furthermore, it offers easy control through its modular construction.

In terms of its operating principle, the FF1000R17IE4PBOSA1 is composed of two main sections, the first of which is the insulated gate. This component is responsible for the current regulation by allowing electrons to flow into the device when required. When the electrons flow out of the device, the current stops because the insulated gate prevents further passage of electrons. The second component of the device is the collector and emitter, which transmit the high current required for energy conversion.

The FF1000R17IE4PBOSA1 module is mainly used in switching mode power supplies, power factor correction, and inverter applications. As a switching device, it helps to improve the efficiency of switch mode power supplies by reducing electrical losses. Furthermore, it can also be used in AC to DC voltage converters, which convert alternating current from the main electrical supply into direct current. Additionally, it can also be used to regulate the power flow in renewable energy applications.

The FF1000R17IE4PBOSA1 module offers superior over-temperature protection and is able to withstand temperatures up to +175°C. It has a maximum junction temperature of +175°C and its peak operating voltage is 1200 V. In addition, it has a wide range of optimized package options and various mounting styles, allowing the user to select the ideal solution for their application.

The FF1000R17IE4PBOSA1 IGBT module is ideal for high power applications that require precise control of current and voltage. It offers superior performance characteristics in harsh environments and is able to keep losses to a minimum. Furthermore, its modular design also makes control easy and its flexible package options make it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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