Allicdata Part #: | FF300R12KE4B2HOSA1-ND |
Manufacturer Part#: |
FF300R12KE4B2HOSA1 |
Price: | $ 84.88 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT MED PWR 62MM-1 |
More Detail: | IGBT Module Trench Field Stop 2 Independent 1200V ... |
DataSheet: | FF300R12KE4B2HOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 77.16170 |
Series: | C |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 460A |
Power - Max: | 1600W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 300A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 19nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FF300R12KE4B2HOSA1 Application Field and Working Principle
FF300R12KE4B2HOSA1 is a high-power IGBT module, a type of transistor. Developed by Infineon Technologies, the FF300R12KE4B2HOSA1 uses the latest technologies in order to achieve maximum power density and efficiency. The module includes several extra components such as gate drives, connection terminals, support components and cooling systems, allowing it to deliver up to 3500A of output current.
IGBTs are three-terminal devices consisting of a thyristor plus a field-effect transistor. They are used to control the flow of high voltage and powers, with significant advantages over other transistors. Not only are they more efficient than conventional BJTs and MOSFETs, but they can also switch far faster and have a much better thermal performance.
The FF300R12KE4B2HOSA1 can work in two modes, "common collector" and "common emitter". The former is used to protect connected loads and is also known as a "high side switch". The latter is designed to drive large currents over long distances and is used when switching high current through inductive loads such as motors.
In terms of its application field, the FF300R12KE4B2HOSA1 is mainly used in industrial automation, such as motor control applications, but also in consumer electronics and home appliances. In motor control applications, IGBTs have become the preferred choice over other transistors. They are capable of driving large currents with minimal power loss and can operate at very high speeds.
In terms of its working principle, the FF300R12KE4B2HOSA1 is a voltage-controlled device. This device consists of two components, the Gate Drive and the switching element. When a voltage is applied to the Gate Drive, the switching element will open and close the path from the external circuit to the load. When the Gate Drive is deactivated, the switching element will return to its off state, preventing the current flow. This allows the device to switch by controlling the voltage.
The features of this device also include a low power loss, which is based on the optimized thermal performance of the module. The module also features under-voltage lockout and over-voltage protection, which ensure that the module works only in the most regulated conditions. This ensures that the module can perform optimally, safely and efficiently.
Overall, the FF300R12KE4B2HOSA1 is a powerful IGBT module which is used to control the flow of high voltage and power. It is used mainly for industrial automation and motor control applications, but can also be used for home appliances and consumer electronics. It has a unique working principle, consisting of two components, and can offer superior thermal performance, high switching speeds and low power losses.
The specific data is subject to PDF, and the above content is for reference
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