FF300R12KT3HOSA1 Allicdata Electronics
Allicdata Part #:

FF300R12KT3HOSA1-ND

Manufacturer Part#:

FF300R12KT3HOSA1

Price: $ 96.80
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 600V 300A
More Detail: IGBT Module Trench Field Stop 2 Independent 1200V ...
DataSheet: FF300R12KT3HOSA1 datasheetFF300R12KT3HOSA1 Datasheet/PDF
Quantity: 10
1 +: $ 88.00470
Stock 10Can Ship Immediately
$ 96.8
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 480A
Power - Max: 1450W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 21nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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FF300R12KT3HOSA1 is a type of insulated gate bipolar transistors (IGBTs). It is an ideal device for medium power applications because of its many advantages. IGBTs are a type of digital semiconductor voltage-controlled switch, and have the advantages of both bipolar transistors and power MOSFETs. They exist in an off state, and can provide very low-on resistance for both forward current and reverse current. Additionally, IGBTs can easily be modulated by control signals that automatically configure different combinations of duration and frequency of the switching cycle.

The FF300R12KT3HOSA1 has many uses in medium-power applications. It is used in motor drives, robotics, automated factories, and many other applications. This device has a low-on resistance FWD of 900Ω and an on resistance REV of 1700Ω. This low-on resistance allows the device to be used in applications such as half bridge or full bridge applications without needing further power conversion. This device is also fully qualified to the JEDEC EIAJ-200 standard.

The FF300R12KT3HOSA1 is designed for medium-power applications and is a more efficient and reliable option for these applications due to its low-on resistance and high-frequency operation. In addition to its low-on resistance, the very low input capacitance of the device provides a great benefit for efficient operation in many applications. The FF300R12KT3HOSA1 has an adjustable gate voltage and can be driven with a pulse width modulation (PWM) signal for on-off control with very little switching losses.

In addition to its technical advantages, the FF300R12KT3HOSA1 is also very reliable and has a high MTBF rating of 5,000,000 hours. The device is also RoHS-compliant, so it is an environmentally-friendly option as well. Additionally, the FF300R12KT3HOSA1 comes with a high power loop, which allows it to be used in a wide variety of applications.

The FF300R12KT3HOSA1 can be used in medium-power applications with low-on resistance and high-frequency operation. It is RoHS-compliant, reliable, and has an adjustable gate voltage for on-off control. It can be used in full bridge and half bridge applications and has an MTBF rating of 5,000,000 hours.

The specific data is subject to PDF, and the above content is for reference

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