FF300R17ME4B11BOSA1 Allicdata Electronics
Allicdata Part #:

FF300R17ME4B11BOSA1-ND

Manufacturer Part#:

FF300R17ME4B11BOSA1

Price: $ 119.59
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 600V 300A
More Detail: IGBT Module Trench Field Stop 2 Independent 1700V ...
DataSheet: FF300R17ME4B11BOSA1 datasheetFF300R17ME4B11BOSA1 Datasheet/PDF
Quantity: 1000
6 +: $ 108.71100
Stock 1000Can Ship Immediately
$ 119.59
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 375A
Power - Max: 1800W
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
Current - Collector Cutoff (Max): 3mA
Input Capacitance (Cies) @ Vce: 24.5nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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FF300R17ME4B11BOSA1 application field and working principle

The FF300R17ME4B11BOSA1 type module is an insulated gate bipolar transistor (IGBT) module developed by ON Semiconductor. It is designed to provide superior performance in power applications. The module consists of two IGBTs, of which the second IGBT is called anode in circuit diagrams. The IGBTs are applied in power controllers and switches, particularly in DC-DC converters, solar inverters, three-phase inverters and motor drives.

Application Field

  • DC/DC converters
  • Solar inverters
  • Three-phase inverters
  • Motor drives

Working Principle

The FF300R17ME4B11BOSA1 type module is an insulated gate bipolar transistor (IGBT) module. An IGBT is a semiconductor device that functions like a cross between a metal-oxide semiconductor field-effect transistor (MOSFET) and a bipolar transistor. IGBTs combine the high blocking and commutation capabilities of an IGBT with the low on-state conduction losses and improved switching characteristics of a MOSFET. The module operates by passing an electric current through the base, which controls the current flow between the emitter and the collector.

The module works by combining the unmatched increased operational speed of a MOSFET with the high current rating of a bipolar junction transistor (BJT). This enables it to switch faster and with lower on-state conduction losses. The module relies on its inherent avalanche characteristics, which enables it to achieve a high peak current, while most other transistors rely on diodes to provide the peak current.

The module can switch high voltages and high currents more quickly with less power lost due to its low on-state conduction losses. It can therefore act as a high-power switch, allowing for rapid switching between high voltages and high currents.

In addition, the module has a much higher and more reliable efficiency than other transistors due to its high blocking voltage and its lower conduction and switching losses. The module is also able to operate in a higher temperature range, which makes it suitable for a number of power control applications.

The specific data is subject to PDF, and the above content is for reference

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