FF300R17ME4PB11BPSA1 Allicdata Electronics
Allicdata Part #:

FF300R17ME4PB11BPSA1-ND

Manufacturer Part#:

FF300R17ME4PB11BPSA1

Price: $ 122.56
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOD IGBT MED PWR ECONOD-4
More Detail: IGBT Module Trench Field Stop Half Bridge 1700V 60...
DataSheet: FF300R17ME4PB11BPSA1 datasheetFF300R17ME4PB11BPSA1 Datasheet/PDF
Quantity: 1000
6 +: $ 111.41300
Stock 1000Can Ship Immediately
$ 122.56
Specifications
Series: EconoDUAL™ 3
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 600A
Power - Max: 20mW
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
Current - Collector Cutoff (Max): 3mA
Input Capacitance (Cies) @ Vce: 24.5nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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The FF300R17ME4PB11BPSA1 is an insulated gate bipolar transistor (IGBT) module. As part of the wide range of IGBTs available, it is used in a multitude of industrial and consumer applications. In this article, we explore the FF300R17ME4PB11BPSA1\'s application field, working principle, and design.

Application Field

The FF300R17ME4PB11BPSA1 IGBT module is designed for use in high-end applications with a minimum of 300V. It is a fantastic choice for use in airplanes, industrial machinery, consumer goods and other critical, high voltage applications. As a module, all of the necessary components to make up an IGBT are inside a single package, greatly simplifying the design process. The FF300R17ME4PB11BPSA1 also supports non-isolated gate drive, making it compatible with a wide array of different circuits.

Working Principle

Insulated gate bipolar transistors (IGBTs) are a type of transistor that combines the benefits of both BJTs and MOSFETs. Essentially, the IGBT is a hybrid of the two types. As with MOSFETs, an IGBT is a three-terminal semiconductor device, consisting of a source (S) gate (G) and drain (D). Like the BJT, it uses a voltage to control the current flow between the source and drain, allowing for easy switching. With an IGBT, the gate is isolated from the source and drain, allowing it to alter the voltage flowing between them. The FF300R17ME4PB11BPSA1 supports non isolated gate drive, meaning the gate can be driven by an external circuit and still be isolated from the incoming high voltage.

Design

The FF300R17ME4PB11BPSA1 IGBT module is housed in a hermetically sealed metal case. Each internal component is designed to withstand voltages of up to 300V. It contains a PN junction, which crosses an insulated gate and is connected to a drain. This is the basic structure of an IGBT. The gate is then connected to an external circuit, allowing for the gate voltage to control the source/drain voltage. This allows for easy switching and makes the FF300R17ME4PB11BPSA1 invaluable for high voltage applications. The metal case is designed to dissipate heat generated from the IGBT and helps protect the internal components from the extreme temperatures. The FF300R17ME4PB11BPSA1 is a well-designed, reliable, and dependable product.

Conclusion

The FF300R17ME4PB11BPSA1 IGBT module is a powerful choice for a variety of high voltage applications. From airplanes to industrial machinery, the IGBT is ideal for a range of critical applications. Its non-isolated gate drive makes it compatible with a wide array of circuits and its hermetically sealed metal case helps dissipate heat and protect the internal components. As an IGBT module, all of the necessary components are already included in a single package, simplifying the design process. In conclusion, the FF300R17ME4PB11BPSA1 is a great choice for any high voltage application.

The specific data is subject to PDF, and the above content is for reference

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