Allicdata Part #: | FF300R12ME3BOSA1-ND |
Manufacturer Part#: |
FF300R12ME3BOSA1 |
Price: | $ 94.58 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT MED PWR ECONOD-3 |
More Detail: | IGBT Module Trench Field Stop Half Bridge Inverter... |
DataSheet: | FF300R12ME3BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 85.98100 |
Specifications
Series: | EconoDUAL™ |
Part Status: | Not For New Designs |
IGBT Type: | Trench Field Stop |
Configuration: | Half Bridge Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 500A |
Power - Max: | 1450W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 300A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 20nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Description
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FF300R12ME3BOSA1 Application field and Working Principle
Insulated Gate Bipolar Transistors (IGBTs) are components with three terminals, namely, the collector, gate and the emitter. In comparison to the regular BJTs, IGBTs are more efficient, smaller and require less power to operate. Furthermore, IGBTs have higher switching speed, high tolerance for dV/dt, low thermal noise, stable temperature coefficient and easier to control than the traditional power transistors. As such, they are frequently used in applications such as motor control, power conversion and in audio power amplifiers. Here, we\'ll discuss the application field and working principle of the FF300R12ME3BOSA1 IGBT module.
The FF300R12ME3BOSA1 is a low-voltage module operating at a voltage of 1200V and a maximum current of 300A. This module is suitable for a wide variety of applications such as motor drives, welding machines, motor control, and other variable-speed motor applications. In addition to these, the module can also be used in inverters, static switches and other power converters. The main features of this module include its high switching frequency (up to 20kHz), low switching losses and high EMI suppression.
The working principle of the FF300R12ME3BOSA1 IGBT module is based on the MOSFET structure. In this structure, an N-type layer between the gate and the source establishes a conductive path when an electric current flows from the gate terminal to the source terminal. This allows the flow of current from the collector to the emitter, which in turn amplifies the input signal. When the gate voltage is reversed, the conductive path is broken and the electric current ceases to flow, resulting in the shutting off of the device.
In conclusion, the FF300R12ME3BOSA1 IGBT module is a high-performance device with a wide range of applications such as motor drives, motor control, welding machines and power converters. The module is based on the MOSFET structure, which allows the flow of current between the gate and the source when suitable voltage is applied at the gate terminal. When this voltage is reversed, the electric current ceases to flow, resulting in the shutting off of the device.
The specific data is subject to PDF, and the above content is for reference
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