FF300R12KE4EHOSA1 Allicdata Electronics
Allicdata Part #:

FF300R12KE4EHOSA1-ND

Manufacturer Part#:

FF300R12KE4EHOSA1

Price: $ 82.45
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 600V 300A
More Detail: IGBT Module Trench Field Stop 2 Independent 1200V ...
DataSheet: FF300R12KE4EHOSA1 datasheetFF300R12KE4EHOSA1 Datasheet/PDF
Quantity: 1000
10 +: $ 74.95670
Stock 1000Can Ship Immediately
$ 82.45
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 460A
Power - Max: 1600W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 19nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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IGBT (Insulated Gate Bipolar Transistor) module is an electronic power semiconductor device that works as an intermediate converter between AC power supply and the power electronic loads. It is an insulated switching transistor which is capable of generating high power output and is used in various industrial applications. The FF300R12KE4EHOSA1 is a state-of-the-art IGBT module from Fairchild Semiconductor which offers a wide range of features and advantages over other IGBTs.

The FF300R12KE4EHOSA1 IGBT module has a maximum power dissipation of 375W and is designed for 600V DC bus operations. It features an EconoDrain package which is suitable for applications such as welding machines, UPS, induction heating and motor drives. The module provides an output of about 300A and an efficiency of up to 97%. It is also capable of operating in a temperature range of -40 to 150°C.

The FF300R12KE4EHOSA1 IGBT module can be used in numerous applications such as motor drives, inverters, servo drives, pulse width modulators, solar power inverters and power supplies. It is a perfect option for those applications that requires high frequency switching, due to its high frequency capabilities and high output current capabilities. It also offers better power losses and a high power density.

The working principle of the FF300R12KE4EHOSA1 IGBT module is based on the combination of an N-channel enhancement mode power MOSFET and NPN bipolar transistor. It is designed to combat power losses by providing a wide range of control features which helps in controlling the switching cycle. The module enables the user to monitor over current and under voltage condition, to monitor the status of the IGBT and protect from eventual irrecoverable damage.

The FF300R12KE4EHOSA1 IGBT module provides enhanced performance and operational capabilities for applications requiring high performance and low power losses. It offers a range of features and benefits, making it an ideal choice for demanding applications. Its fast switching capabilities and high output current capabilities make it an ideal choice for motor drives and UPS. Its advanced EconoDrain package provides improved thermal performance which further adds to its efficiency.

The FF300R12KE4EHOSA1 IGBT module is a perfect choice for applications requiring high frequency switching capabilities, fast switching and high output current ratings. Its EconoDrain package provides unparalleled thermal performance and its built-in control features help in protecting the circuitry from any possible damages. Its wide range of features, output current capabilities and power dissipation makes it an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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