Allicdata Part #: | FF400R06KE3HOSA1-ND |
Manufacturer Part#: |
FF400R06KE3HOSA1 |
Price: | $ 87.86 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 600V 400A |
More Detail: | IGBT Module Trench Field Stop Half Bridge 600V 500... |
DataSheet: | FF400R06KE3HOSA1 Datasheet/PDF |
Quantity: | 48 |
1 +: | $ 79.87770 |
Series: | C |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 500A |
Power - Max: | 1250W |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 400A |
Current - Collector Cutoff (Max): | 5mA |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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Introduction
FF400R06KE3HOSA1 is an insulated gate bipolar transistor (IGBT) module. Modules allow manufacturers to combine multiple IGBTs into a single unit. They are composed of IGBTs, suppression diodes and heat sinks that make them more space-efficient, increasing reliability by reducing thermal challenges and simplifying design. This particular offering is a 600-amp rated unit with a voltage rating of 1200V.
Application Field
FF400R06KE3HOSA1\'s range of application is extensive due to its great performance and efficiency. It is most frequently used in power converters, adjustable speed drives, motor drives, induction heating, electric vehicles, and UPS systems. Additionally, this IGBT module is also favoured in aviation, robotics, and high-end manufacturing. It is an ideal choice for applications that require greater than 30% duty cycles.
Working Principle
The FF400R06KE3HOSA1 operates on the principle of voltage applied to the base of a bipolar transistor that is used to control the emitter current of two IGBTs, or two insulated gate bipolar transistors in parallel. In other words, the amplified current of the control transistor is applied to the IGBT’s cell gate terminal. The electric field established between the gate and emitter modifies the physical state of the IGBT’s cell and affects the turn-on and turn-off speed of the module.
The typical design of an FF400R06KE3HOSA1 consists of two IGBTs in parallel, connected in series with their respective bypass diodes. By connecting the IGBTs in parallel, the module has a higher current carrying capacity than just a single IGBT. The bypass diodes protect the power semiconductor from voltage peaks that are generated due to the freewheeling current when the IGBT turns off.
Advantages
The FF400R06KE3HOSA1 presents a number of advantages over other power modules. It has a significant temperature operation margin, as it can operate between temperatures of -55° to 150°C (-67°F to 302°F). Its speed characteristics also make it suitable for advanced control circuit driving or modulation requirements. Additionally, its increased emitter-collector breakdown voltage makes it the ideal low-loss IGBT module.
Conclusion
The FF400R06KE3HOSA1 IGBT module is a versatile 600-amp rated module with a voltage rating of 1200V. With its range of advantages and versatile applications, FF400R06KE3HOSA1 presents itself as a great all-round option for motor drives, UPS systems, power converters, and more. Its heat sink ensures excellent reliability and efficient heat transfer from the module, allowing it to maximize its high performance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FF400R06KE3HOSA1 | Infineon Tec... | 87.86 $ | 48 | IGBT MODULE 600V 400AIGBT... |
FF400R12KE3HOSA1 | Infineon Tec... | 112.88 $ | 7 | IGBT MODULE 1200V 400AIGB... |
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