Allicdata Part #: | FF400R12KT3HOSA1-ND |
Manufacturer Part#: |
FF400R12KT3HOSA1 |
Price: | $ 105.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 650V 400A |
More Detail: | IGBT Module Trench Field Stop 2 Independent 1200V ... |
DataSheet: | FF400R12KT3HOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 95.47580 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 580A |
Power - Max: | 2000W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 400A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 28nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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IGBT stands for insulated-gate bipolar transistor (IGBT). It is used as a larger-sized semiconductor switch in power systems and appliances. The FF400R12KT3HOSA1 is a power module consisting of IGBTs in an integrated circuit. It combines an insulated gate FET (IGFET) and a bipolar junction transistor (BJT). This power module is produced by Farichild Semiconductor.
The FF400R12KT3HOSA1 module is a popular choice for applications that require high-power switching. It is commonly used in electric vehicle and consumer electronics applications, as well as automotive, industrial, and consumer industries. The module is also frequently used in power distributions and switching applications. Its primary use is for switching motors, appliances, and lighting.
The FF400R12KT3HOSA1 module has an IGBT module with three-phase gate drive, power supply decoupling, and fast turn-on/turn-off time. Its main features include low leakage current, fast switching, low switching losses, reverse voltage protection, and good thermal performance. The main components of the module include the insulated gate FET, the bipolar junction transistor, and the gate drive.
The FF400R12KT3HOSA1 module’s working principle is based on three main functions: control, power switching, and protection. The control function uses the associated gate voltage to activate the insulated gate FET. This will then open the circuit and allow current to flow through. The power switching function is enabled by the presence of the bipolar junction transistor, which allows the current to switch from off to on and vice versa in a short amount of time. Lastly, the protection function is enabled by the presence of the associated gate voltage that protects the device from damage due to overheating or current overload.
The advantage of the FF400R12KT3HOSA1 module is that it is more efficient than other types of IGBTs. It also has a high degree of temperature stability, which makes it suitable for many applications. Furthermore, it offers lower switching losses and fast switching speed, which helps reduce system costs. Additionally, the device has superior reverse voltage protection, which provides a high degree of safety. The device also features a built-in gate oscillation suppression, which helps ensure the stability of the gate drive signal.
Overall, the FF400R12KT3HOSA1 is a reliable and efficient IGBT module. It provides an excellent combination of power, control, and protection for many applications. As such, it is a suitable choice for electric vehicle, consumer electronics, automotive, industrial, and consumer applications. The module is also suitable for power distribution and switching applications, where it can provide fast and efficient switching.
The specific data is subject to PDF, and the above content is for reference
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