Allicdata Part #: | FF400R17KE4EHOSA1-ND |
Manufacturer Part#: |
FF400R17KE4EHOSA1 |
Price: | $ 165.72 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT MED PWR 62MM-1 |
More Detail: | IGBT Module Trench Field Stop Half Bridge 1700V 40... |
DataSheet: | FF400R17KE4EHOSA1 Datasheet/PDF |
Quantity: | 10 |
1 +: | $ 150.65200 |
10 +: | $ 144.28500 |
Specifications
Series: | C |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 400A |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 400A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 36nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Description
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FF400R17KE4EHOSA1 Application Field and Working Principle
FF400R17KE4EHOSA1 is a high performance field-stop IGBT module. It is widely used in medium voltage applications such as high power inverters, motor drives and wind turbine drives. This article will discuss the application field and working principle of the FF400R17KE4EHOSA1 module.Transistors-IGBTs-Modules
Application Field
The FF400R17KE4EHOSA1 module is designed for low to medium voltage operation and can handle up to 400V DC. The module is capable of providing a power output of up to 17kW and a current capacity up to 150A. It can be used in various applications such as motor drives, power inverters, renewable energy systems, and wind turbines. The module is also suitable for low current, low frequency applications, where the dynamic switching behavior is not critical.Working Principle
The FF400R17KE4EHOSA1 module is essentially a three-phase insulated gate bipolar transistor (IGBT). It is essentially a metal-oxide semiconductor field-effect transistor (MOSFET) with an added bipolar junction transistor (BJT). The metal-oxide semiconductor (MOS) gate control the conduction process by allowing or blocking the flow of current between the emitter and collector contact. The bipolar junction transistor (BJT) makes it possible to switch the gate cell of many IGBTs at the same time. This is known as an ‘Intelligent’ gate-driver concept. The FF400R17KE4EHOSA1 module features a reinforced isolation system and an integrated temperature sensor to constantly monitor the module temperature. The R17KE4EHOSA1 also has a low on-state voltage drop, low switching losses, low gate threshold voltage and fast switching times. The module has an integrated heat spreader which dissipates the heat generated during operation. This helps avoid heating problems and also allows for a compact footprint of the module.Conclusion
In conclusion, the FF400R17KE4EHOSA1 module is an ideal choice for low to medium voltage applications such as motor drives, wind turbines and renewable energy systems. It has a wide range of features such as reinforced isolation system, temperature sensor and integrated heat spreader. The module also has fast switching times, low on-state voltage drop and low switching losses. It is an excellent choice for those looking for a reliable and high performance field-stop IGBT module.The specific data is subject to PDF, and the above content is for reference
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