Allicdata Part #: | FF400R12KT3PEHOSA1-ND |
Manufacturer Part#: |
FF400R12KT3PEHOSA1 |
Price: | $ 129.31 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT MED PWR 62MM-1 |
More Detail: | IGBT Module Trench Field Stop Half Bridge 1200V 40... |
DataSheet: | FF400R12KT3PEHOSA1 Datasheet/PDF |
Quantity: | 1000 |
8 +: | $ 117.55500 |
Series: | C |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 400A |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 400A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 28nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FF400R12KT3PEHOSA1 module is a three-phase insulated gate bipolar transistor (IGBT) module designed for use in a variety of applications requiring robust performance and reliable control of high temperature and/or power demands. This module has the capability to handle up to 1200A of current, making it suitable for a range of industrial, commercial and heavy-duty applications in the power industry.
The FF400R12KT3PEHOSA1 module is a highly efficient, insulated-gate bipolar transistor (IGBT) module driven by voltage pulses. It is capable of providing a wide range of continuous conduction modes and controlled output to improve system performance and efficiency. The module is capable of up to 1200 Amps of continuous current, making it suitable for a wide range of industrial, commercial and heavy-duty applications. The Module is equipped with fast-acting gate drivers to reduce gate-terminal capacitance, along with reverse current shut-off and temperature protection circuitry.
The FF400R12KT3PEHOSA1 module works through a principal of Insulated Gate Bipolar Transistor (IGBT) turning on and off. When using the module, a voltage is applied to the gate to turn the IGBT “ON”. The IGBT conduct then, allowing current to flow through it. When the voltage is removed, the IGBT turns “OFF”, preventing current from flowing. The F400R12KT3PEHOSA1 module has the ability to modulate the rate of switching, allowing for precise control and efficient setting of the output current.
The FF400R12KT3PEHOSA1 module uses its fast-acting gate drivers to reduce gate-terminal capacitance, prevent reverse current from entering the drain, and provide temperature protection. It can operate in temperatures up to 150°C. The module can be used for a variety of industrial, commercial and heavy-duty applications, and is typically utilized in photovoltaic systems, power supplies and motor drives.
FF400R12KT3PEHOSA1 module is an ideal choice for applications that require consistent power output and reliable control of a high temperature and/or power demand. Its fast-acting gate drivers, reverse current shut-off and temperature protection circuitry, and robust performance make it a dependable and cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
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