Allicdata Part #: | FF400R12KE3B2HOSA1-ND |
Manufacturer Part#: |
FF400R12KE3B2HOSA1 |
Price: | $ 105.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 650V 400A |
More Detail: | IGBT Module Trench Field Stop 2 Independent 1200V ... |
DataSheet: | FF400R12KE3B2HOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 95.47580 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 580A |
Power - Max: | 2000W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 400A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 28nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FF400R12KE3B2HOSA1 application field and working principle
FF400R12KE3B2HOSA1 is a modular IGBT (Insulated Gate Bipolar Transistor) which is used in a variety of power conversion systems. An IGBT is a type of power transistor which combines the properties of both a conventional transistor and a FET (Field Effect Transistor). It has an insulated gate like a FET, as well as a bipolar base like a normal transistor. The FF400R12KE3B2HOSA1 offers an improved version of the popular FF400R12KE3B2, featuring higher levels of current and voltage control, improved response times, and lower levels of power loss. This makes it ideal for applications where fast switching times, high levels of power, and precise control are required.
The FF400R12KE3B2HOSA1 IGBT is used in a wide range of power conversion systems, from solar inverters and UPS solutions to AC motor drive systems and industrial automation systems. In addition, the modular form factor makes installation quick and easy, allowing a wide range of applications to be covered. Compared to conventional transistor solutions, IGBT modules such as the FF400R12KE3B2HOSA1 offer a range of advantages, such as improved efficiency, current capacity, and switching speed.
Working Principle
The working principle of an IGBT is similar to that of a standard transistor, with the additional benefit of insulated gate control. Upon applied voltage, the insulated gate will attract mobile electrons from the N-type material and direct them to the P-type material, forming an N-type channel. The current flowing through this channel will turn on the IGBT, allowing current to flow. The insulated gate allows for precise control of the N-type channel, giving the IGBT desired characteristics such as increased current capacity, isolation, and efficiency.
Applications
Given the advantages that IGBT modules such as the FF400R12KE3B2HOSA1 offer, they are becoming increasingly popular in a range of power conversion applications. These are just a few of the applications that use IGBTs:
- Solar Inverters
- UPS Systems
- AC Motor Drives
- Industrial Automation Systems
- Power Factor Correction Systems
- Switched Mode Power Supplies
- DC-DC Converters
- Uninterruptible Power Supplies
These are just a few of the many applications that the FF400R12KE3B2HOSA1 can be used in. Its modular form factor makes it easy to integrate into a wide range of systems, while its improved current and voltage specifications make it capable of meeting a variety of power conversion needs.
Conclusion
The FF400R12KE3B2HOSA1 is a high-performance IGBT module which offers a number of advantages over conventional transistors. Its high current and voltage capacity, improved response times, and low levels of power loss make it the ideal choice for a wide range of power conversion applications. Its modular form factor makes installation quick and easy, and its improved IGBT technology offers superior results compared to conventional transistor solutions.
The specific data is subject to PDF, and the above content is for reference
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