Allicdata Part #: | FF400R07KE4HOSA1-ND |
Manufacturer Part#: |
FF400R07KE4HOSA1 |
Price: | $ 82.61 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 650V 400A |
More Detail: | IGBT Module Trench Field Stop 2 Independent 650V ... |
DataSheet: | FF400R07KE4HOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 75.09880 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Power - Max: | 1250W |
Vce(on) (Max) @ Vge, Ic: | 1.95V @ 15V, 400A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 26nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FF400R07KE4HOSA1 is a bidirectional insulated-gate bipolar transistor (IGBT) module produced by Infineon. This device is suitable for a wide range of power electronic applications, providing a great deal of performance in both single and three phase systems. The FF400R07KE4HOSA1 is designed to meet or exceed the requirements of the IEC, JEC and CSA standards and has been tested extensively to ensure reliable operation in a wide range of environments.
The FF400R07KE4HOSA1 IGBT module consists of six IGBT chips that are connected in parallel to form a single device. This IGBT module has an advanced control system built into it, which allows it to be easily integrated into any power electronics system. The integrated control system and superior design of the module give it superior performance in both single and three phase applications.
The FF400R07KE4HOSA1 is mainly used in applications such as solar inverters, welding inverters, motor drives, UPS and UPS-related products, converter inverters, switching power supplies and inverters for AC switchgear. It can also be used as a discrete component in a number of power applications.
The FF400R07KE4HOSA1 IGBT module works by applying a current to the gate of the IGBT. This current creates a voltage across the IGBT, which causes it to turn on. The current then flows through the semiconductor material, allowing conduction to the other electrode. This process can be repeated multiple times, allowing current to be switched on and off rapidly and efficiently.
The FF400R07KE4HOSA1 IGBT module is designed with a number of features that make it an ideal choice for a wide range of power application. It has a low maximum gate voltage and low output current density, which ensures it operates at higher efficiency levels than other IGBT modules. It also has a high current capacity and temperature coefficient, making it ideal for high frequency operation. The TTL compatible gate drive provides a high level of control and accuracy, whilst its reverse half-bridge design allows for symmetrical operation in full-bridge applications.
In addition to its superior technical features, the FF400R07KE4HOSA1 IGBT module also offers a wide range of benefits. With its low power consumption, it can help to reduce operating costs and noise levels, making it ideal for use in power electronic systems running on sensitive circuits. Its low gate voltage also improves device operation by improving thermal efficiency and reducing EMI levels.
Overall, the FF400R07KE4HOSA1 IGBT module is an attractive and reliable component for a wide range of power applications. With its superior control system, advanced design and a range of technical features, it is an excellent choice for both single and three phase applications. It is also available in a variety of packages, making it suitable for use in almost any situation.
The specific data is subject to PDF, and the above content is for reference
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