FJ3P02100L Discrete Semiconductor Products

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The FJ3P02100L is a type of all-insulated surfacing plastic case silicon N-channel transistor. This transistor is capable of carrying currents up to 100A and has a Drain to Source breakdown voltage of 200V. This shallow trench field effect transistor (FET) is ideal for applications such as switching power supplies, temperature controllers, battery chargers and various other power supply applications in the range between 1.8V and 15V.

A field effect transistor is a type of transistor which uses the electrical properties of its semiconductor material to control the current that flows between its main terminals. In an N-channel FET, the main terminal controlling the current is called the drain. The terminal adjacent to the drain is called the gate and it is used to provide the electric field to control the current. The third terminal, which is adjacent to the gate, is called the source and it is connected back to the power supply.

The FJ3P02100L has a unique design that enables it to effectively control the current flow between its source and drain even at very low voltages. It features a very shallow trench, which allows it to maintain very low power losses even at high drain currents. Additionally, it has a very high current carrying capacity and a very low gate threshold voltage, which makes it ideal for use in circuits that require low input voltages. This transistor is also well suited for use in temperature controllers, since its shallow trench design allows it to more accurately control the current flow to the device.

In order to use the FJ3P02100L, the user must first understand its working principle. The FJ3P02100L is a voltage-controlled device and its main purpose is to control the current flowing between its source and drain electrodes. When a certain voltage is applied to the gate, it induces a positive or negative electric field in the transistor, which results in either the forward or reverse biasing of the source and drain. This, in turn, affects the current flowing between the two terminals.

In general, when a positive voltage is applied to the gate, it results in the forward biasing of the source and drain, allowing current to flow through the transistor. On the other hand, when a negative voltage is applied to the gate, it reverse biases the source and drain, which inhibits current from flowing. By varying the voltage applied to the gate, the user can effectively control the amount of current that flows between the source and drain.

The FJ3P02100L can be used for a wide range of applications in the 1.8V to 15V range. It is particularly well-suited for use in switching power supplies, since its shallow trench design allows it to reduce switching power losses and its high current carrying capacity enables it to effectively control the current output. Additionally, it is especially useful for temperature controllers, since its low input voltage requirement enables it to more accurately control the current to the device.

In conclusion, the FJ3P02100L is a versatile N-channel MOSFET transistor. It has a low gate threshold voltage and a high current carrying capacity, making it ideal for use in a variety of applications. Additionally, its shallow trench design allows it to reduce switching power losses and provides more accurate current control in temperature controllers.

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