FJAF4210YTU Allicdata Electronics
Allicdata Part #:

FJAF4210YTU-ND

Manufacturer Part#:

FJAF4210YTU

Price: $ 1.98
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 140V 10A TO-3PF
More Detail: Bipolar (BJT) Transistor PNP 140V 10A 30MHz 80W Th...
DataSheet: FJAF4210YTU datasheetFJAF4210YTU Datasheet/PDF
Quantity: 162
1 +: $ 1.79550
10 +: $ 1.61028
100 +: $ 1.29446
500 +: $ 1.06352
1000 +: $ 0.88120
Stock 162Can Ship Immediately
$ 1.98
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 3A, 4V
Power - Max: 80W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-94
Supplier Device Package: TO-3PF
Description

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The FJAF4210YTU is a type of single-package bipolar transistor that can be used for a wide variety of applications. It is designed to provide high current gain and low electrical noise. Its package size allows for use in small spaces, making it suitable for portable equipment. It\'s also suitable for high-frequency applications. The FJAF4210YTU is generally easier to use than most other transistors, as its large package offers easier access to terminals and better heat dissipation. It is available in various voltage and current ratings, making it suitable for many different applications.

The FJAF4210YTU is classified as a bipolar (BJT) transistor. It consists of three interconnected elements that are used to control the current through the transistor. The base element is responsible for controlling the current flow, the collector is responsible for the collector-emitter voltage, and the emitter is responsible for collecting the current from the collector. The FJAF4210YTU is also a single-package device, meaning that all of the components are contained in a single package.

The basic working principle of the FJAF4210YTU is based on the emitter-base junction, which is a diode. When a voltage is applied to the emitter, the current flowing through the transistor will be determined by the height of the potential barrier created by the emitter-base junction. The higher the potential barrier, the higher the current flow. In addition, the emitter temperature can also affect the current flow. As the emitter temperature increases, the current flowing through the transistor increases as well.

The FJAF4210YTU has a wide range of applications. It can be used for power switching applications, frequency control, analog circuit applications, as well as logic level voltage translators. For example, it can be used in power amplifiers to provide a high voltage gain and low electrical noise. It can also be used in logic circuits to switch between various logic levels. In analog circuit applications, it can be used for frequency control and for the translation of analog signals.

The FJAF4210YTU is a useful and versatile device that can be used in a wide variety of applications. Its package size allows it to be used in small spaces, and its large current gain and low noise levels make it suitable for high-frequency applications. Its working principle is based on the emitter-base junction, which can be adjusted to control the current flow through the transistor. This makes it suitable for power switching and frequency control applications. In addition, it is also suitable for analog circuit applications, such as voltage translators. As a result, the FJAF4210YTU offers a wide variety of uses in both digital and analog circuit applications.

The specific data is subject to PDF, and the above content is for reference

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