FJAF4310YTU Allicdata Electronics
Allicdata Part #:

FJAF4310YTU-ND

Manufacturer Part#:

FJAF4310YTU

Price: $ 1.87
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 140V 10A TO-3PF
More Detail: Bipolar (BJT) Transistor NPN 140V 10A 30MHz 80W Th...
DataSheet: FJAF4310YTU datasheetFJAF4310YTU Datasheet/PDF
Quantity: 216
1 +: $ 1.70100
10 +: $ 1.52523
100 +: $ 1.22611
500 +: $ 1.00737
1000 +: $ 0.83467
Stock 216Can Ship Immediately
$ 1.87
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 3A, 4V
Power - Max: 80W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-94
Supplier Device Package: TO-3PF
Description

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The FJAF4310YTU is a high-performance single-bipolar transistor (BJT) component used in modern circuit designs. It features a wide range of applications, from low- to high-frequency, as well as its use in a variety of power amplification and switching circuit designs. As an NPN component, the FJAF4310YTU has an emitter connected to an inclined base, and its collector is connected to an inclined emitter. It is designed to operate with a wide range of frequency and voltages, making it suitable for numerous applications.

The FJAF4310YTU showcases its functional capabilities by providing high gain and excellent power capability. This component is designed to exhibit very low distortion and other performance degrading nonlinear effects, making it ideal for the many requirements of amplifier and switch designs. With excellent ripple rejection and low transistor noise, it can offer improved power performance when coupled with the proper amplifier stage. Its low-noise figure makes it an attractive option when operating at higher frequencies.

As a single-bipolar transistor, the FJAF4310YTU is capable of operating at various amplifier stages, from low power audio amplification systems to high output power amplification systems. Its range of voltage and current ratings allows for flexible use in different designs and for the implementation of various power amplifiers and power electronic applications.

The working principle of the FJAF4310YTU is based on the majority carrier transport between the emitter and collector of the component. When a current flows through the emitter of the transistor, majority carriers are released, which are then swept away by the electric field of the collector. This process is responsible for the amplification of the current and emission of the electrical signal from the collector.

Likewise, during the discard process, the majority carriers are dragged away from the collector by the electric field of the emitter and directed to the emitter, achieving a reversed current flow and resulting in a diminished level of transistor current. This bi-directional current flow is controlled with the base current, resulting in amplified output at the collector.

The FJAF4310YTU is particularly suitable for use in audio systems and power amplifier and power electronic switch circuits, where its low-noise figure, low distortion, and excellent handling of ripple currents make it ideal. Its wide range of voltage and current ratings enables it to be used in various applications and provide highly efficient power performance.

In conclusion, the FJAF4310YTU is a high-performance single-bipolar Transistor designed for use in modern electronic circuits for a wide range of applications. Its working principle of majority carrier transport allows for an amplified output from the collector and its low-noise factor and excellent handling of ripple currents make it an ideal choice when performance is of paramount importance.

The specific data is subject to PDF, and the above content is for reference

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